Memristive Circuit Design of Nonassociative Learning under Different Emotional Stimuli

Sun, J; Zhao, L; Wen, S; Wang, Y

Memristive Circuit Design of Nonassociative Learning under Different Emotional Stimuli

Sun, J Zhao, L Wen, S

Wang, Y

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Publisher:: MDPI
Publication Type:: Journal Article
Citation:: Electronics (Switzerland), 2022, 11, (23), pp. 3851
Issue Date:: 2022-12-01

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Field	Value	Language
dc.contributor.author	Sun, J
dc.contributor.author	Zhao, L
dc.contributor.author	Wen, S https://orcid.org/0000-0001-8077-7001
dc.contributor.author	Wang, Y
dc.date.accessioned	2023-02-28T03:20:15Z
dc.date.available	2023-02-28T03:20:15Z
dc.date.issued	2022-12-01
dc.identifier.citation	Electronics (Switzerland), 2022, 11, (23), pp. 3851
dc.identifier.issn	1450-5843
dc.identifier.issn	2079-9292
dc.identifier.uri	http://hdl.handle.net/10453/166505
dc.description.abstract	Most memristor-based circuits only consider the mechanism of nonassociative learning, and the effect of emotion on nonassociative learning is ignored. In this paper, a memristive circuit that can realize nonassociative learning under different emotional stimuli is designed. The designed circuit consists of stimulus judgment module, habituation module, sensitization module, emotion module. When different stimuli are applied, habituation or sensitisation is formed based on the intensity and nature of the stimuli. In addition, the influence of emotion on nonassociative is considered. Different emotional stimuli will affect the speed of habituation formation and strong negative stimuli will lead to sensitization. The simulation results on PSPICE show that the circuit can simulate the above complex biological mechanism. The memristive circuit of nonassociative learning under different emotional stimuli provides some references for brain-like systems.
dc.language	en
dc.publisher	MDPI
dc.relation.ispartof	Electronics (Switzerland)
dc.relation.isbasedon	10.3390/electronics11233851
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	0906 Electrical and Electronic Engineering
dc.title	Memristive Circuit Design of Nonassociative Learning under Different Emotional Stimuli
dc.type	Journal Article
utslib.citation.volume	11
utslib.for	0906 Electrical and Electronic Engineering
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Strength - AAII - Australian Artificial Intelligence Institute
utslib.copyright.status	open_access	*
dc.date.updated	2023-02-28T03:20:13Z
pubs.issue	23
pubs.publication-status	Published
pubs.volume	11
utslib.citation.issue	23

Abstract:

Most memristor-based circuits only consider the mechanism of nonassociative learning, and the effect of emotion on nonassociative learning is ignored. In this paper, a memristive circuit that can realize nonassociative learning under different emotional stimuli is designed. The designed circuit consists of stimulus judgment module, habituation module, sensitization module, emotion module. When different stimuli are applied, habituation or sensitisation is formed based on the intensity and nature of the stimuli. In addition, the influence of emotion on nonassociative is considered. Different emotional stimuli will affect the speed of habituation formation and strong negative stimuli will lead to sensitization. The simulation results on PSPICE show that the circuit can simulate the above complex biological mechanism. The memristive circuit of nonassociative learning under different emotional stimuli provides some references for brain-like systems.

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http://hdl.handle.net/10453/166505