Two-Port-Reflectionless Negative-Group-Delay Circuit on Multilayered Lossy Bandstop Filter
- Publisher:
- IEEE
- Publication Type:
- Conference Proceeding
- Citation:
- IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2021 - Proceedings, 2022, volume1, pp. 1-3
- Issue Date:
- 2022-01-01
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| Filename | Description | Size | |||
|---|---|---|---|---|---|
| Two-Port-Reflectionless_Negative-Group-Delay_Circuit_on_Multilayered_Lossy_Bandstop_Filter.pdf | Published version | 3.92 MB |
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A symmetrical reflectionless negative-group-delay (NGD) circuit based on a multilayered lossy bandstop filter (BSF) is presented. It consists of two identical back-to-back-connected lossy BSFs, each of them being shaped by a resistively-terminated lossy microstrip-to-microstrip vertical transition and a lossy microstrip section arranged in a quasi-complementary-diplexer-based structure. The NGD property is determined by the shaped microstrip lossy BSF channel, whilst the resistively-terminated lossy vertical transitions are used to absorb the non-transmitted in-band RF-input-signal energy of the BSF channel in order to attain perfect power matching at the center frequency f0 and broadband two-port-reflectionless behavior. Its theoretical operational foundations are detailed through even-/odd-mode analysis of the equivalent circuit of the proposed lossy BSF. Besides, its main properties are discussed in terms of power-attenuation levels, NGD depth at f0, and NGD bandwidth (BW). For experimental-demonstration purposes, a two-layered microstrip prototype of the engineered two-port-reflectionless lossy-BSF-based NGD circuit is designed and characterized.
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