Miniaturized On-Chip Notch Filter With Sharp Selectivity and >35-dB Attenuation in 0.13-μm Bulk CMOS Technology
- Publisher:
- Institute of Electrical and Electronics Engineers (IEEE)
- Publication Type:
- Journal Article
- Citation:
- IEEE Electron Device Letters, 2022, 43, (8), pp. 1175-1178
- Issue Date:
- 2022-08-01
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| Filename | Description | Size | |||
|---|---|---|---|---|---|
| Miniaturized On-Chip Notch Filter With Sharp Selectivity and >35-dB Attenuation in 0.13-μm Bulk CMOS Technology.pdf | Published version | 1.36 MB |
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In this letter, a compact electromagnetic (EM) structure for miniaturized notch filter design in standard silicon technology is presented. Unlike prior-art on-chip bandstop filters, this filter configuration achieves sharp selectivity and large notch attenuation depth by producing a strong coupling between the top layer (i.e., resonating stub-loaded input-to-output direct path) and the bottom layer (i.e., two spiral-line grounded resonators). Moreover, as these vertically-stacked layers are broadside coupled, the physical footprint of the EM structure is significantly reduced. To demonstrate the proposed principle of notch filter, a simplified lossless behavioral model using ideal lumped elements is developed and verified. In addition, EM simulations are performed for parametric studies. As proof of concept, a prototype is fabricated in 0.13-μm bulk CMOS technology. The measurement results show that the designed filter exhibits a notch located at 19 GHz with an attenuation depth higher than 37 dB. The footprint, excluding the pads, is only 0.028 mm2 (0.096×0.296 mm2).
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