Low-leakage epitaxial graphene field-effect transistors on cubic silicon carbide on silicon

Pradeepkumar, A; Cheng, HH; Liu, KY; Gebert, M; Bhattacharyya, S; Fuhrer, MS; Iacopi, F

Low-leakage epitaxial graphene field-effect transistors on cubic silicon carbide on silicon

Pradeepkumar, A Cheng, HH Liu, KY Gebert, M Bhattacharyya, S Fuhrer, MS Iacopi, F

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Publisher:: AIP Publishing
Publication Type:: Journal Article
Citation:: Journal of Applied Physics, 2023, 133, (17)
Issue Date:: 2023-05-07

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Field	Value	Language
dc.contributor.author	Pradeepkumar, A
dc.contributor.author	Cheng, HH
dc.contributor.author	Liu, KY
dc.contributor.author	Gebert, M
dc.contributor.author	Bhattacharyya, S
dc.contributor.author	Fuhrer, MS
dc.contributor.author	Iacopi, F https://orcid.org/0000-0002-3196-0990
dc.date.accessioned	2023-05-05T08:52:17Z
dc.date.available	2023-05-05T08:52:17Z
dc.date.issued	2023-05-07
dc.identifier.citation	Journal of Applied Physics, 2023, 133, (17)
dc.identifier.issn	0021-8979
dc.identifier.issn	1089-7550
dc.identifier.uri	http://hdl.handle.net/10453/170235
dc.description.abstract	<jats:p>Epitaxial graphene (EG) on cubic silicon carbide (3C-SiC) on silicon holds the promise of tunable nanoelectronic and nanophotonic devices, some uniquely unlocked by the graphene/cubic silicon carbide combination, directly integrated with the current well-established silicon technologies. Yet, the development of graphene field-effect devices based on the 3C-SiC/Si substrate system has been historically hindered by poor graphene quality and coverage, as well as substantial leakage issues of the heteroepitaxial system. We address these issues by growing EG on 3C-SiC on highly resistive silicon substrates using an alloy-mediated approach. In this work, we demonstrate a field-effect transistor based on EG/3C-SiC/Si with gate leakage current 6 orders of magnitude lower than the drain current at room temperature, which is a vast improvement on the current literature, opening the possibility for dynamically tunable nanoelectronic and nanophotonic devices on silicon at the wafer level.</jats:p>
dc.language	en
dc.publisher	AIP Publishing
dc.relation	http://purl.org/au-research/grants/arc/CE200100010
dc.relation.ispartof	Journal of Applied Physics
dc.relation.isbasedon	10.1063/5.0147376
dc.rights	info:eu-repo/semantics/openAccess
dc.rights	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in (Journal of Applied Physics 133, 174503 (2023)) and may be found at https://doi.org/10.1063/5.0147376
dc.subject	01 Mathematical Sciences, 02 Physical Sciences, 09 Engineering
dc.subject.classification	Applied Physics
dc.title	Low-leakage epitaxial graphene field-effect transistors on cubic silicon carbide on silicon
dc.type	Journal Article
utslib.citation.volume	133
utslib.for	01 Mathematical Sciences
utslib.for	02 Physical Sciences
utslib.for	09 Engineering
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	open_access	*
dc.date.updated	2023-05-05T08:52:16Z
pubs.issue	17
pubs.publication-status	Published online
pubs.volume	133
utslib.citation.issue	17

Abstract:

Epitaxial graphene (EG) on cubic silicon carbide (3C-SiC) on silicon holds the promise of tunable nanoelectronic and nanophotonic devices, some uniquely unlocked by the graphene/cubic silicon carbide combination, directly integrated with the current well-established silicon technologies. Yet, the development of graphene field-effect devices based on the 3C-SiC/Si substrate system has been historically hindered by poor graphene quality and coverage, as well as substantial leakage issues of the heteroepitaxial system. We address these issues by growing EG on 3C-SiC on highly resistive silicon substrates using an alloy-mediated approach. In this work, we demonstrate a field-effect transistor based on EG/3C-SiC/Si with gate leakage current 6 orders of magnitude lower than the drain current at room temperature, which is a vast improvement on the current literature, opening the possibility for dynamically tunable nanoelectronic and nanophotonic devices on silicon at the wafer level.

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http://hdl.handle.net/10453/170235