Direct synthesis of nanopatterned epitaxial graphene on silicon carbide.

Katzmarek, D; Mancini, A; Maier, S; Iacopi, F

Direct synthesis of nanopatterned epitaxial graphene on silicon carbide.

Katzmarek, D Mancini, A Maier, S Iacopi, F

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Publisher:: IOP Publishing
Publication Type:: Journal Article
Citation:: Nanotechnology, 2023
Issue Date:: 2023-07-03

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Field	Value	Language
dc.contributor.author	Katzmarek, D
dc.contributor.author	Mancini, A
dc.contributor.author	Maier, S
dc.contributor.author	Iacopi, F https://orcid.org/0000-0002-3196-0990
dc.date.accessioned	2023-07-18T02:59:44Z
dc.date.available	2023-07-18T02:59:44Z
dc.date.issued	2023-07-03
dc.identifier.citation	Nanotechnology, 2023
dc.identifier.issn	0957-4484
dc.identifier.issn	1361-6528
dc.identifier.uri	http://hdl.handle.net/10453/171560
dc.description.abstract	This article introduces a straightforward approach for the direct synthesis of transfer-free, nanopatterned epitaxial graphene on silicon carbide on silicon substrates. A catalytic alloy tailored to optimal SiC graphitization is pre-patterned with common lithography and lift-off techniques to form planar graphene structures on top of an unpatterned SiC layer. This method is compatible with both electron-beam lithography and UV-lithography, and graphene gratings down to at least ~100 nm width/space can be realized at the wafer scale. The minimum pitch is limited by the flow of the metal catalyst during the liquid-phase graphitization process. We expect that the current pitch resolution could be further improved by optimizing the metal deposition method and lift-off process. .
dc.format	Print-Electronic
dc.language	eng
dc.publisher	IOP Publishing
dc.relation	http://purl.org/au-research/grants/arc/CE200100010
dc.relation.ispartof	Nanotechnology
dc.relation.isbasedon	10.1088/1361-6528/ace369
dc.rights	info:eu-repo/semantics/embargoedAccess
dc.rights	'This is an author-created, un-copyedited version of an article accepted for publication in [Nanotechnology, 2023)]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher-authenticated version is available online at [03 Jul 2023 https://www.ncbi.nlm.nih.gov/pubmed/37399800].'
dc.subject.classification	Nanoscience & Nanotechnology
dc.title	Direct synthesis of nanopatterned epitaxial graphene on silicon carbide.
dc.type	Journal Article
utslib.location.activity	England
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	in_progress	*
utslib.copyright.embargo	2024-07-03T00:00:00+1000Z
dc.date.updated	2023-07-18T02:59:36Z
pubs.publication-status	Published online

Abstract:

This article introduces a straightforward approach for the direct synthesis of transfer-free, nanopatterned epitaxial graphene on silicon carbide on silicon substrates. A catalytic alloy tailored to optimal SiC graphitization is pre-patterned with common lithography and lift-off techniques to form planar graphene structures on top of an unpatterned SiC layer. This method is compatible with both electron-beam lithography and UV-lithography, and graphene gratings down to at least ~100 nm width/space can be realized at the wafer scale. The minimum pitch is limited by the flow of the metal catalyst during the liquid-phase graphitization process. We expect that the current pitch resolution could be further improved by optimizing the metal deposition method and lift-off process. .

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/171560