A Silicon Migration Model Incorporating Anisotropic Surface Energy and Non-Uniform Diffusivity

Wong, HX; Lee, JEY

A Silicon Migration Model Incorporating Anisotropic Surface Energy and Non-Uniform Diffusivity

Wong, HX Lee, JEY

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Publisher:: Institute of Electrical and Electronics Engineers (IEEE)
Publication Type:: Journal Article
Citation:: Journal of Microelectromechanical Systems, 2022, 31, (6), pp. 943-950
Issue Date:: 2022-12-01

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Field	Value	Language
dc.contributor.author	Wong, HX
dc.contributor.author	Lee, JEY
dc.date.accessioned	2023-07-23T23:00:07Z
dc.date.available	2023-07-23T23:00:07Z
dc.date.issued	2022-12-01
dc.identifier.citation	Journal of Microelectromechanical Systems, 2022, 31, (6), pp. 943-950
dc.identifier.issn	1057-7157
dc.identifier.issn	1941-0158
dc.identifier.uri	http://hdl.handle.net/10453/171619
dc.description.abstract	Silicon migration is a process that can produce seamless, single-crystal silicon cavities in a single mask layer, greatly simplifying process flows for forming various cavity-and channel-based structures. However, controlling the dimensions of the final cavity and membrane thickness is complex and difficult to predict. To address this challenge, we present an efficient and accurate method of simulating silicon migration, which advances the state of art in three ways. First, it accounts for anisotropic surface energy. Second, it uniquely models selective migration. Third, the method is implemented in Python, an open source and highly pervasive programming language. We validate the model using experimental results from the literature, and we show that incorporating anisotropy is critical for simulating high aspect ratio, high density etch hole arrays. We also find indications in the simulations of selective migration that anisotropy may be less significant for very large curvature (radius less than 100 nm) features. Lastly, we use this new model to predict the relationship between layout and annealing time for a given set of final objective cavity and membrane dimensions. [2022-0128]
dc.language	en
dc.publisher	Institute of Electrical and Electronics Engineers (IEEE)
dc.relation.ispartof	Journal of Microelectromechanical Systems
dc.relation.isbasedon	10.1109/JMEMS.2022.3200007
dc.rights	info:eu-repo/semantics/embargoedAccess
dc.subject	0906 Electrical and Electronic Engineering, 0910 Manufacturing Engineering, 0913 Mechanical Engineering
dc.subject.classification	Nanoscience & Nanotechnology
dc.subject.classification	4009 Electronics, sensors and digital hardware
dc.subject.classification	4017 Mechanical engineering
dc.title	A Silicon Migration Model Incorporating Anisotropic Surface Energy and Non-Uniform Diffusivity
dc.type	Journal Article
utslib.citation.volume	31
utslib.for	0906 Electrical and Electronic Engineering
utslib.for	0910 Manufacturing Engineering
utslib.for	0913 Mechanical Engineering
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	embargoed	*
utslib.copyright.embargo	2024-12-31T00:00:00+1000Z
dc.date.updated	2023-07-23T23:00:05Z
pubs.issue	6
pubs.publication-status	Published
pubs.volume	31
utslib.citation.issue	6

Abstract:

Silicon migration is a process that can produce seamless, single-crystal silicon cavities in a single mask layer, greatly simplifying process flows for forming various cavity-and channel-based structures. However, controlling the dimensions of the final cavity and membrane thickness is complex and difficult to predict. To address this challenge, we present an efficient and accurate method of simulating silicon migration, which advances the state of art in three ways. First, it accounts for anisotropic surface energy. Second, it uniquely models selective migration. Third, the method is implemented in Python, an open source and highly pervasive programming language. We validate the model using experimental results from the literature, and we show that incorporating anisotropy is critical for simulating high aspect ratio, high density etch hole arrays. We also find indications in the simulations of selective migration that anisotropy may be less significant for very large curvature (radius less than 100 nm) features. Lastly, we use this new model to predict the relationship between layout and annealing time for a given set of final objective cavity and membrane dimensions. [2022-0128]

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http://hdl.handle.net/10453/171619