Correlation of Wafer-scale Film Stress Effects on ScAlN pMUT Parameters
- Publisher:
- IEEE
- Publication Type:
- Conference Proceeding
- Citation:
- 2022 IEEE International Ultrasonics Symposium (IUS), 2022, 2022-October, pp. 1-4
- Issue Date:
- 2022-12-01
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| Filename | Description | Size | |||
|---|---|---|---|---|---|
| Correlation_of_Wafer-scale_Film_Stress_Effects_on_ScAlN_pMUT_Parameters.pdf | Published version | 488.3 kB |
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We report preliminary wafer level measurement results of air coupled mathrm S mathrm c 0 15 mathrm A mathrm l 0 85 mathrm N pMUTs recently fabricated in our Lab in Fab 8 inch line In this work we show that the mathrm K mathrm t 2 and mechanical performance of the devices are correlated to the resonant frequency in connection to film stress At lower film stresses the electromechanical coupling mathrm K mathrm t 2 can reach typical values of 3 While ScAlN based pMUTs of similar levels of doping concentration have been reported previously mathrm K mathrm t 2 has been limited to approximately 2 1 In this work the effects of varying tensile film stress have been recorded to show drastic changes to Kt2 causing variations on the wafer level from 0 5 to 3 in relation to the induced local stress The effect on the resonant frequency of the device was also recorded ranging from 157kHz to 215kHz These effects were also validated mechanically under an LDV that show displacement transfer variations of 224 to 557nm V whereby the transfer is inversely proportional to the amount of tensile stress
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