Parameter Extraction of Thin-Film Scandium-Doped Aluminum Nitride in Piezoelectric Over Silicon-On-Nothing Platform
- Publisher:
- IEEE
- Publication Type:
- Conference Proceeding
- Citation:
- 2022 IEEE International Ultrasonics Symposium (IUS), 2022, 2022-October, pp. 1-4
- Issue Date:
- 2022-12-01
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| Filename | Description | Size | |||
|---|---|---|---|---|---|
| Parameter_Extraction_of_Thin-Film_Scandium-Doped_Aluminum_Nitride_in_Piezoelectric_Over_Silicon-On-Nothing_Platform.pdf | Published version | 1.05 MB |
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We present a method to extract transverse elastic properties Young s modulus shear modulus and Poisson s ratio and relative permittivity of 15 scandium Sc doped aluminum nitride AIN film from electrical measurements of resonators and parallel plate capacitors The resonators comprise a vertical stack of boldsymbol 0 3 mu mathbf m thick mathbf Sc boldsymbol 0 15 mathbf Al boldsymbol 0 85 mathbf N being sandwiched between boldsymbol 0 2 mu mathbf m thick molybdenum Mo and boldsymbol 2 mu mathbf m thick degenerately doped pre released silicon Si membrane on cavity as fabricated using our piezoelectric over silicon on nothing platform Parallel plate capacitors followed the same vertical stack except that these were fabricated on unreleased but degenerately doped Si layers Despite the large thickness ratio between pre released degenerately doped Si membrane to mathbf Sc boldsymbol 0 15 mathbf Al boldsymbol 0 85 mathbf N film we have successfully extracted 2 elements mathbf S 11 and mathbf S 12 from the compliance matrix using an iterative gradient descent method and relative permittivity of mathbf Sc boldsymbol 0 15 mathbf Al boldsymbol 0 85 mathbf N film
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