Sputtered PZT pMUT with Bias-Tunable Electromechanical Coupling Coefficient for Air-coupled Ranging Applications

Liu, J; Choong, DSW; Goh, DJ; Merugu, S; Zhang, QX; Chang, P; Leotti, A; Tan, H-S; Hidayat, A; Ghosh, S; Ramegowda, PC; Chen, DS-H; Giusti, D; Quaglia, F; Pedrini, C; Barabani, L; Castoldi, L; Ng, EJ; Lee, JE-Y

Sputtered PZT pMUT with Bias-Tunable Electromechanical Coupling Coefficient for Air-coupled Ranging Applications

Liu, J Choong, DSW Goh, DJ Merugu, S Zhang, QX Chang, P Leotti, A Tan, H-S Hidayat, A Ghosh, S Ramegowda, PC Chen, DS-H Giusti, D Quaglia, F Pedrini, C Barabani, L Castoldi, L Ng, EJ Lee, JE-Y

Permalink

Publisher:: IEEE
Publication Type:: Conference Proceeding
Citation:: 2022 IEEE International Ultrasonics Symposium (IUS), 2022, 2022-October, pp. 1-4
Issue Date:: 2022-12-01

In Progress

	Filename	Description	Size
	Sputtered_PZT_pMUT_with_Bias-Tunable_Electromechanical_Coupling_Coefficient_for_Air-coupled_Ranging_Applications.pdf	Published version	815.27 kB	Adobe PDF	View/Open

Copyright Clearance Process

Recently Added
In Progress
Open Access

This item is being processed and is not currently available.

Full metadata record

Field	Value	Language
dc.contributor.author	Liu, J
dc.contributor.author	Choong, DSW
dc.contributor.author	Goh, DJ
dc.contributor.author	Merugu, S
dc.contributor.author	Zhang, QX
dc.contributor.author	Chang, P
dc.contributor.author	Leotti, A
dc.contributor.author	Tan, H-S
dc.contributor.author	Hidayat, A
dc.contributor.author	Ghosh, S
dc.contributor.author	Ramegowda, PC
dc.contributor.author	Chen, DS-H
dc.contributor.author	Giusti, D
dc.contributor.author	Quaglia, F
dc.contributor.author	Pedrini, C
dc.contributor.author	Barabani, L
dc.contributor.author	Castoldi, L
dc.contributor.author	Ng, EJ
dc.contributor.author	Lee, JE-Y
dc.date	2022-10-10
dc.date.accessioned	2023-07-24T22:24:47Z
dc.date.available	2023-07-24T22:24:47Z
dc.date.issued	2022-12-01
dc.identifier.citation	2022 IEEE International Ultrasonics Symposium (IUS), 2022, 2022-October, pp. 1-4
dc.identifier.isbn	978-1-6654-6657-8
dc.identifier.issn	1948-5719
dc.identifier.issn	1948-5727
dc.identifier.uri	http://hdl.handle.net/10453/171635
dc.description.abstract	We report preliminary wafer level measurement results of air coupled phase vapor deposition PVD PZT pMUTs for ranging applications recently fabricated in our Lab in Fab 8 inch line Dual port PVD PZT pMUTs designed to resonate in the 100kHz range were fabricated based on a boldsymbol 2 mu mathbf m thick PZT film on a boldsymbol 4 mu mathbf m thick silicon diaphragm The standard deviation of the PZT stack capacitance was 2 across the wafer Despite the sensitivity of compliant diaphragms to film residual stress the standard deviation of frequency was 5 Out of 16 sites across wafer probed all devices were verified to be in good working condition Given the strong piezoelectric constant of the PZT film mathbf e boldsymbol 31 mathbf f boldsymbol sim 16 mathbf C mathbf m boldsymbol 2 and compliance of the diaphragm designed for ranging applications we demonstrate large tunability in frequency 120 210kHz mathbf K mathbf t boldsymbol 2 1 7 3 and quality factor 50 100 for a bias voltage range of0 40V Results have been obtained without poling of the PVD PZT film No unresponsive devices were found
dc.language	en
dc.publisher	IEEE
dc.relation.ispartof	2022 IEEE International Ultrasonics Symposium (IUS)
dc.relation.ispartof	IEEE International Ultrasonics Symposium
dc.relation.isbasedon	10.1109/ius54386.2022.9958698
dc.rights	info:eu-repo/semantics/restrictedAccess
dc.title	Sputtered PZT pMUT with Bias-Tunable Electromechanical Coupling Coefficient for Air-coupled Ranging Applications
dc.type	Conference Proceeding
utslib.citation.volume	2022-October
utslib.location.activity	Venice, Italy
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	in_progress	*
pubs.consider-herdc	false
dc.date.updated	2023-07-24T22:24:46Z
pubs.finish-date	2022-10-13
pubs.place-of-publication	Piscataway, USA
pubs.publication-status	Published
pubs.start-date	2022-10-10
pubs.volume	2022-October
dc.location	Piscataway, USA

Abstract:

We report preliminary wafer level measurement results of air coupled phase vapor deposition PVD PZT pMUTs for ranging applications recently fabricated in our Lab in Fab 8 inch line Dual port PVD PZT pMUTs designed to resonate in the 100kHz range were fabricated based on a boldsymbol 2 mu mathbf m thick PZT film on a boldsymbol 4 mu mathbf m thick silicon diaphragm The standard deviation of the PZT stack capacitance was 2 across the wafer Despite the sensitivity of compliant diaphragms to film residual stress the standard deviation of frequency was 5 Out of 16 sites across wafer probed all devices were verified to be in good working condition Given the strong piezoelectric constant of the PZT film mathbf e boldsymbol 31 mathbf f boldsymbol sim 16 mathbf C mathbf m boldsymbol 2 and compliance of the diaphragm designed for ranging applications we demonstrate large tunability in frequency 120 210kHz mathbf K mathbf t boldsymbol 2 1 7 3 and quality factor 50 100 for a bias voltage range of0 40V Results have been obtained without poling of the PVD PZT film No unresponsive devices were found

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/171635