Design of Millimetre-Wave Low-Noise Amplifier in 130-nm SiGe HBT Technology
- Publisher:
- IEEE
- Publication Type:
- Conference Proceeding
- Citation:
- 2022 International Symposium on Antennas and Propagation (ISAP), 2023, 00, pp. 545-546
- Issue Date:
- 2023-01-02
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Design_of_Millimetre-Wave_Low-Noise_Amplifier_in_130-nm_SiGe_HBT_Technology.pdf | Published version | 318.92 kB |
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Design of a millimetre wave low noise amplifier LNA in 130 nm SiGe HBT technology is presented in this work To balance the design trade offs between NF and linearity the bias voltage is carefully selected Based on the electromagnetic simulations the designed LNA has a smallsignal gain of 20 dB and S11 is better than 14 dB at 20 GHz The NF is lower than 2 5 dB and the input P1dB is 15 dBm The overall size of the designed mixer with all RF and DC pads is only 1 0 75 mm2
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