Low-Loss and Compact Millimeter-Wave Silicon-Based Filters: Overview, New Developments in Silicon-on-Insulator Technology, and Future Trends

Nericua, R; Wang, K; Zhu, H; Gomez-Garcia, R; Zhu, X

Low-Loss and Compact Millimeter-Wave Silicon-Based Filters: Overview, New Developments in Silicon-on-Insulator Technology, and Future Trends

Nericua, R

Wang, K Zhu, H Gomez-Garcia, R Zhu, X

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Publisher:: Institute of Electrical and Electronics Engineers
Publication Type:: Journal Article
Citation:: IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 2024, 14, (1), pp. 30-40
Issue Date:: 2024-01-01

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Field	Value	Language
dc.contributor.author	Nericua, R https://orcid.org/0000-0003-2431-9043
dc.contributor.author	Wang, K
dc.contributor.author	Zhu, H
dc.contributor.author	Gomez-Garcia, R
dc.contributor.author	Zhu, X
dc.date.accessioned	2024-08-07T04:32:55Z
dc.date.available	2024-08-07T04:32:55Z
dc.date.issued	2024-01-01
dc.identifier.citation	IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 2024, 14, (1), pp. 30-40
dc.identifier.issn	2156-3357
dc.identifier.issn	2156-3365
dc.identifier.uri	http://hdl.handle.net/10453/180201
dc.description.abstract	This paper presents an overview of Silicon-based millimeter-wave (mm-wave) passive devices for bandpass and bandstop filtering applications, while also reporting originally-conceived filter developments and future trends. First of all, the state-of-the-art on mm-wave low-loss bandpass filters (BPFs) is covered, and new BPF designs are shown. The engineered BPFs employ a center-tapped ring architecture with shunt-connected capacitors to realize a standard 2nd-order baseline BPF design, which is subsequently scaled to 30-GHz and 60-GHz operational frequencies. To increase the selectivity as well as the stopband rejection levels of this baseline BPF, the in-series cascade connection of the baseline BPF units is used for a higher-order BPF realization. For experimental-validation purposes, a total of four mm-wave BPFs based on these design strategies are implemented, fabricated in 45-nm Silicon-on-Insulator (SOI) complementary-metal-oxide-semiconductor-(CMOS) technology, and tested. Afterward, a review of Silicon-based-integrated bandstop filters (BSFs) operating in the mm-wave region is provided, which includes both reflective-type and reflectionless/absorptive filter realizations for RF-interference-suppression in highly-congested electromagnetic (EM) environments. Finally, future research trends in the Silicon-based-integrated filter area are discussed. They are expected to play a key role in the development of modern radio-frequency (RF) front-ends for emerging beyond 5G and EM-sensing scenarios.
dc.language	English
dc.publisher	Institute of Electrical and Electronics Engineers
dc.relation	http://purl.org/au-research/grants/arc/LP200301506
dc.relation	http://purl.org/au-research/grants/arc/LP210100378
dc.relation.ispartof	IEEE Journal on Emerging and Selected Topics in Circuits and Systems
dc.relation.isbasedon	10.1109/JETCAS.2023.3345476
dc.rights	info:eu-repo/semantics/restrictedAccess
dc.subject.classification	4008 Electrical engineering
dc.title	Low-Loss and Compact Millimeter-Wave Silicon-Based Filters: Overview, New Developments in Silicon-on-Insulator Technology, and Future Trends
dc.type	Journal Article
utslib.citation.volume	14
pubs.organisational-group	University of Technology Sydney
pubs.organisational-group	University of Technology Sydney/Faculty of Engineering and Information Technology
utslib.copyright.status	recently_added	*
pubs.consider-herdc	false
dc.date.updated	2024-08-07T04:32:43Z
pubs.issue	1
pubs.publication-status	Published
pubs.volume	14
utslib.citation.issue	1

Abstract:

This paper presents an overview of Silicon-based millimeter-wave (mm-wave) passive devices for bandpass and bandstop filtering applications, while also reporting originally-conceived filter developments and future trends. First of all, the state-of-the-art on mm-wave low-loss bandpass filters (BPFs) is covered, and new BPF designs are shown. The engineered BPFs employ a center-tapped ring architecture with shunt-connected capacitors to realize a standard 2nd-order baseline BPF design, which is subsequently scaled to 30-GHz and 60-GHz operational frequencies. To increase the selectivity as well as the stopband rejection levels of this baseline BPF, the in-series cascade connection of the baseline BPF units is used for a higher-order BPF realization. For experimental-validation purposes, a total of four mm-wave BPFs based on these design strategies are implemented, fabricated in 45-nm Silicon-on-Insulator (SOI) complementary-metal-oxide-semiconductor-(CMOS) technology, and tested. Afterward, a review of Silicon-based-integrated bandstop filters (BSFs) operating in the mm-wave region is provided, which includes both reflective-type and reflectionless/absorptive filter realizations for RF-interference-suppression in highly-congested electromagnetic (EM) environments. Finally, future research trends in the Silicon-based-integrated filter area are discussed. They are expected to play a key role in the development of modern radio-frequency (RF) front-ends for emerging beyond 5G and EM-sensing scenarios.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/180201