Design of a 75-85 GHz Driver Amplifier in 0.1-μm Gallium Arsenide pHEMT Technology

Chau, QT; Zhu, X; Schwitter, B

Design of a 75-85 GHz Driver Amplifier in 0.1-μm Gallium Arsenide pHEMT Technology

Chau, QT Zhu, X Schwitter, B

Permalink

Publisher:: IEEE
Publication Type:: Conference Proceeding
Citation:: 2023 Asia-Pacific Microwave Conference (APMC), 2024, 00, pp. 423-425
Issue Date:: 2024-02-22

Recently Added

	Filename	Description	Size
	1717085.pdf	Published version	825.73 kB	Adobe PDF	View/Open

Copyright Clearance Process

Recently Added
In Progress
Open Access

This item is new to OPUS and is not currently available.

Full metadata record

Field	Value	Language
dc.contributor.author	Chau, QT
dc.contributor.author	Zhu, X
dc.contributor.author	Schwitter, B https://orcid.org/0000-0003-3203-8639
dc.date	2023-12-05
dc.date.accessioned	2024-08-07T05:10:48Z
dc.date.available	2024-08-07T05:10:48Z
dc.date.issued	2024-02-22
dc.identifier.citation	2023 Asia-Pacific Microwave Conference (APMC), 2024, 00, pp. 423-425
dc.identifier.isbn	978-1-6654-9419-9
dc.identifier.issn	2690-3946
dc.identifier.uri	http://hdl.handle.net/10453/180279
dc.description.abstract	This paper describes the design of a three stage driver amplifier operating between 75 and 85 GHz The amplifier is implemented using a 0 1 mu mathrm m Gallium Arsenide technology Based on the measured results the amplifier has a small signal gain of 18 8 dB at a nominal bias condition at the mid band In addition more than 18 2 dBm output power is achieved across the bandwidth The maximum output power of 20 9 dBm is obtained at 81 GHz The designed amplifier is very compact only 1 2 times 0 76 mathrm mm 2 in size including the pads and consumes 100 mA from a 4 V power supply
dc.language	en
dc.publisher	IEEE
dc.relation.ispartof	2023 Asia-Pacific Microwave Conference (APMC)
dc.relation.ispartof	2023 Asia-Pacific Microwave Conference
dc.relation.isbasedon	10.1109/apmc57107.2023.10439901
dc.rights	info:eu-repo/semantics/restrictedAccess
dc.title	Design of a 75-85 GHz Driver Amplifier in 0.1-μm Gallium Arsenide pHEMT Technology
dc.type	Conference Proceeding
utslib.citation.volume	00
utslib.location.activity	Taipei, Taiwan
pubs.organisational-group	University of Technology Sydney
pubs.organisational-group	University of Technology Sydney/Faculty of Engineering and Information Technology
utslib.copyright.status	recently_added	*
dc.date.updated	2024-08-07T05:10:46Z
pubs.finish-date	2023-12-08
pubs.place-of-publication	Piscataway, USA
pubs.publication-status	Published
pubs.start-date	2023-12-05
pubs.volume	00
dc.location	Piscataway, USA

Abstract:

This paper describes the design of a three stage driver amplifier operating between 75 and 85 GHz The amplifier is implemented using a 0 1 mu mathrm m Gallium Arsenide technology Based on the measured results the amplifier has a small signal gain of 18 8 dB at a nominal bias condition at the mid band In addition more than 18 2 dBm output power is achieved across the bandwidth The maximum output power of 20 9 dBm is obtained at 81 GHz The designed amplifier is very compact only 1 2 times 0 76 mathrm mm 2 in size including the pads and consumes 100 mA from a 4 V power supply

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/180279