A 2<sup>nd</sup>-order Bandpass Filter With 1.6-dB Insertion Loss and 47-dB Upper-Stopband Suppression in 45-nm SOI CMOS Technology

Yang, X; Zhu, H; Zhao, Y; Chen, Z; Sun, F; Zhu, X

A 2<sup>nd</sup>-order Bandpass Filter With 1.6-dB Insertion Loss and 47-dB Upper-Stopband Suppression in 45-nm SOI CMOS Technology

Yang, X Zhu, H Zhao, Y Chen, Z Sun, F Zhu, X

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Publisher:: Institute of Electrical and Electronics Engineers (IEEE)
Publication Type:: Journal Article
Citation:: IEEE Electron Device Letters, 2024, 45, (10), pp. 1-1
Issue Date:: 2024-01-01

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Field	Value	Language
dc.contributor.author	Yang, X
dc.contributor.author	Zhu, H
dc.contributor.author	Zhao, Y
dc.contributor.author	Chen, Z
dc.contributor.author	Sun, F
dc.contributor.author	Zhu, X https://orcid.org/0000-0002-5814-394X
dc.date.accessioned	2024-10-09T01:50:45Z
dc.date.available	2024-10-09T01:50:45Z
dc.date.issued	2024-01-01
dc.identifier.citation	IEEE Electron Device Letters, 2024, 45, (10), pp. 1-1
dc.identifier.issn	0741-3106
dc.identifier.issn	1558-0563
dc.identifier.uri	http://hdl.handle.net/10453/181302
dc.description.abstract	In this letter, a design methodology is presented to generate an upper-stopband transmission zero (TZ) for a bandpass filter (BPF) for improving the selectivity and the stopband suppression performance. Using this method, the TZ can be generated in a very flexible way. As proof of concept, a 30-GHz 2nd-order bandpass filter (BPF) is fabricated in 45-nm SOI CMOS technology. The measured insertion loss is less than 1.6 dB, and the upper-stopband suppression is greater than 45 dB. Besides, the footprint, excluding the pads, is only 0.046 mm2.
dc.language	en
dc.publisher	Institute of Electrical and Electronics Engineers (IEEE)
dc.relation.ispartof	IEEE Electron Device Letters
dc.relation.isbasedon	10.1109/LED.2024.3435697
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject	0906 Electrical and Electronic Engineering
dc.subject.classification	Applied Physics
dc.subject.classification	4009 Electronics, sensors and digital hardware
dc.title	A 2<sup>nd</sup>-order Bandpass Filter With 1.6-dB Insertion Loss and 47-dB Upper-Stopband Suppression in 45-nm SOI CMOS Technology
dc.type	Journal Article
utslib.citation.volume	45
utslib.for	0906 Electrical and Electronic Engineering
pubs.organisational-group	University of Technology Sydney
pubs.organisational-group	University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	University of Technology Sydney/Strength - GBDTC - Global Big Data Technologies
pubs.organisational-group	University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	University of Technology Sydney/UTS Groups
pubs.organisational-group	University of Technology Sydney/UTS Groups/Global Big Data Technologies Centre (GBDTC)
utslib.copyright.status	closed_access	*
dc.date.updated	2024-10-09T01:50:42Z
pubs.issue	10
pubs.publication-status	Published
pubs.volume	45
utslib.citation.issue	10

Abstract:

In this letter, a design methodology is presented to generate an upper-stopband transmission zero (TZ) for a bandpass filter (BPF) for improving the selectivity and the stopband suppression performance. Using this method, the TZ can be generated in a very flexible way. As proof of concept, a 30-GHz 2nd-order bandpass filter (BPF) is fabricated in 45-nm SOI CMOS technology. The measured insertion loss is less than 1.6 dB, and the upper-stopband suppression is greater than 45 dB. Besides, the footprint, excluding the pads, is only 0.046 mm2.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/181302