Low-Voltage Solid State DCCB Design Based on Bypassed Bidirectional Thyristor-Capacitor Suppressor

Moradian, M; Peykarporsan, R; Lie, TT; Gunawardane, K

Low-Voltage Solid State DCCB Design Based on Bypassed Bidirectional Thyristor-Capacitor Suppressor

Moradian, M Peykarporsan, R Lie, TT Gunawardane, K

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Publisher:: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Publication Type:: Journal Article
Citation:: IEEE Transactions on Power Electronics, 2024, 40, (1), pp. 516-525
Issue Date:: 2024-01-01

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Field	Value	Language
dc.contributor.author	Moradian, M
dc.contributor.author	Peykarporsan, R
dc.contributor.author	Lie, TT
dc.contributor.author	Gunawardane, K https://orcid.org/0000-0001-5254-0162
dc.date.accessioned	2025-01-03T02:21:44Z
dc.date.available	2025-01-03T02:21:44Z
dc.date.issued	2024-01-01
dc.identifier.citation	IEEE Transactions on Power Electronics, 2024, 40, (1), pp. 516-525
dc.identifier.issn	0885-8993
dc.identifier.issn	1941-0107
dc.identifier.uri	http://hdl.handle.net/10453/182912
dc.description.abstract	This article introduces a novel technique known as Bidirectional Thyristor Capacitor (BiTriCap) designed to interrupt DC currents effectively and mitigate power surges in low-voltage (LV) solid-state DC circuit breakers (SS-DCCB). The method employs parallel snubber capacitors to absorb switching effects, subsequently releasing stored energy during the subsequent switch operation. The model incorporates considerations for both line and load inductances, offering a realistic portrayal of a DC system and ensuring authentic protective measures. To validate the efficacy of this approach, practical results from the system are cross-referenced with simulation outputs, validating the credibility of the research findings. Additionally, an ARM microcontroller is programmed to control the sequence of actions among the active SS switches, optimizing their performance. The proposed LV SS-DCCB operates at a voltage level of 48 VDC and nominal current of 8 A. However, the design is scalable and can be extended to accommodate higher voltage and current ranges.
dc.language	English
dc.publisher	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.relation.ispartof	IEEE Transactions on Power Electronics
dc.relation.isbasedon	10.1109/TPEL.2024.3463734
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject	0906 Electrical and Electronic Engineering
dc.subject.classification	Electrical & Electronic Engineering
dc.subject.classification	4008 Electrical engineering
dc.subject.classification	4009 Electronics, sensors and digital hardware
dc.title	Low-Voltage Solid State DCCB Design Based on Bypassed Bidirectional Thyristor-Capacitor Suppressor
dc.type	Journal Article
utslib.citation.volume	40
utslib.for	0906 Electrical and Electronic Engineering
pubs.organisational-group	University of Technology Sydney
pubs.organisational-group	University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	closed_access	*
dc.date.updated	2025-01-03T02:21:40Z
pubs.issue	1
pubs.publication-status	Published
pubs.volume	40
utslib.citation.issue	1

Abstract:

This article introduces a novel technique known as Bidirectional Thyristor Capacitor (BiTriCap) designed to interrupt DC currents effectively and mitigate power surges in low-voltage (LV) solid-state DC circuit breakers (SS-DCCB). The method employs parallel snubber capacitors to absorb switching effects, subsequently releasing stored energy during the subsequent switch operation. The model incorporates considerations for both line and load inductances, offering a realistic portrayal of a DC system and ensuring authentic protective measures. To validate the efficacy of this approach, practical results from the system are cross-referenced with simulation outputs, validating the credibility of the research findings. Additionally, an ARM microcontroller is programmed to control the sequence of actions among the active SS switches, optimizing their performance. The proposed LV SS-DCCB operates at a voltage level of 48 VDC and nominal current of 8 A. However, the design is scalable and can be extended to accommodate higher voltage and current ranges.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/182912