A fully integrated GaAs HBT power amplifier for WLAN 802.11ax applications

Yang, X; Leng, Z; Chen, L; Ge, Z; Zhou, J; Sun, F

A fully integrated GaAs HBT power amplifier for WLAN 802.11ax applications

Yang, X Leng, Z Chen, L Ge, Z Zhou, J Sun, F

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Publisher:: Wiley
Publication Type:: Journal Article
Citation:: Microwave and Optical Technology Letters, 2024, 66, (10)
Issue Date:: 2024-10-01

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Field	Value	Language
dc.contributor.author	Yang, X
dc.contributor.author	Leng, Z
dc.contributor.author	Chen, L
dc.contributor.author	Ge, Z
dc.contributor.author	Zhou, J
dc.contributor.author	Sun, F
dc.date.accessioned	2025-03-18T02:08:01Z
dc.date.available	2025-03-18T02:08:01Z
dc.date.issued	2024-10-01
dc.identifier.citation	Microwave and Optical Technology Letters, 2024, 66, (10)
dc.identifier.issn	0895-2477
dc.identifier.issn	1098-2760
dc.identifier.uri	http://hdl.handle.net/10453/185957
dc.description.abstract	A fully integrated gallium arsenide (GaAs) heterojunction bipolar transistor (HBT) power amplifier (PA) for wireless local area network 802.11ax applications is presented in this paper. The structure consists of two-stage power cells. To satisfy the high linearity requirements of IEEE 802.11ax, we analyzed the distortion of amplitude-to-amplitude and amplitude-to-phase. Due to the thermal and voltage sensitivity of GaAs HBT, an adaptive bias circuit is designed to ensure linearity. Moreover, an efficient passive output matching network is designed by analyzing the efficiency of the passive network. The design electromagnetic structure is fabricated in a 2-μm GaAs HBT process. Under continuous wave testing, the output power reaches 27.2 dBm and the maximum efficiency of 28% at 2.4 GHz. Under the excitation of a 40 MHz 1024-quadratic amplitude modulation signal, the output power meeting error vector magnitude of −35 dB reaches 16.8–17.2 dBm from 2.4 to 2.5 GHz.
dc.language	en
dc.publisher	Wiley
dc.relation.ispartof	Microwave and Optical Technology Letters
dc.relation.isbasedon	10.1002/mop.70000
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject	0205 Optical Physics, 0906 Electrical and Electronic Engineering, 1005 Communications Technologies
dc.subject.classification	Networking & Telecommunications
dc.subject.classification	4006 Communications engineering
dc.subject.classification	4009 Electronics, sensors and digital hardware
dc.title	A fully integrated GaAs HBT power amplifier for WLAN 802.11ax applications
dc.type	Journal Article
utslib.citation.volume	66
utslib.for	0205 Optical Physics
utslib.for	0906 Electrical and Electronic Engineering
utslib.for	1005 Communications Technologies
pubs.organisational-group	University of Technology Sydney
pubs.organisational-group	University of Technology Sydney/Faculty of Engineering and Information Technology
utslib.copyright.status	closed_access	*
dc.date.updated	2025-03-18T02:07:59Z
pubs.issue	10
pubs.publication-status	Published
pubs.volume	66
utslib.citation.issue	10

Abstract:

A fully integrated gallium arsenide (GaAs) heterojunction bipolar transistor (HBT) power amplifier (PA) for wireless local area network 802.11ax applications is presented in this paper. The structure consists of two-stage power cells. To satisfy the high linearity requirements of IEEE 802.11ax, we analyzed the distortion of amplitude-to-amplitude and amplitude-to-phase. Due to the thermal and voltage sensitivity of GaAs HBT, an adaptive bias circuit is designed to ensure linearity. Moreover, an efficient passive output matching network is designed by analyzing the efficiency of the passive network. The design electromagnetic structure is fabricated in a 2-μm GaAs HBT process. Under continuous wave testing, the output power reaches 27.2 dBm and the maximum efficiency of 28% at 2.4 GHz. Under the excitation of a 40 MHz 1024-quadratic amplitude modulation signal, the output power meeting error vector magnitude of −35 dB reaches 16.8–17.2 dBm from 2.4 to 2.5 GHz.

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http://hdl.handle.net/10453/185957