Spontaneous Growth of Gallium-Filled Microcapillaries on Ion-Bombarded GaN

Botman, A; Bahm, AS; Randolph, S; Straw, M; Toth, M

Spontaneous Growth of Gallium-Filled Microcapillaries on Ion-Bombarded GaN

Botman, A Bahm, AS Randolph, S Straw, M Toth, M

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Publisher:: Amer Physical Soc
Publication Type:: Journal Article
Citation:: Botman, Aurelien et al. 2013, 'Spontaneous Growth of Gallium-Filled Microcapillaries on Ion-Bombarded GaN', Physical Review Letters, vol. 111, no. 13, pp. 135503-1-135503-5.
Issue Date:: 2013

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Field	Value	Language
dc.contributor.author	Botman, A	en_US
dc.contributor.author	Bahm, AS	en_US
dc.contributor.author	Randolph, S	en_US
dc.contributor.author	Straw, M	en_US
dc.contributor.author	Toth, M	en_US
dc.date.accessioned	2014-04-14T02:53:21Z
dc.date.available	2014-04-14T02:53:21Z
dc.date.issued	2013	en_US
dc.identifier	2013001029	en_US
dc.identifier.citation	Botman, Aurelien et al. 2013, 'Spontaneous Growth of Gallium-Filled Microcapillaries on Ion-Bombarded GaN', Physical Review Letters, vol. 111, no. 13, pp. 135503-1-135503-5.	en_US
dc.identifier.issn	0031-9007	en_US
dc.identifier.other	C1	en_US
dc.identifier.uri	http://hdl.handle.net/10453/27098
dc.description.abstract	Bottom-up growth of microscopic pillars is observed at room temperature on GaN irradiated with a Ga+ beam in a gaseous XeF2 environment. Ion bombardment produces Ga droplets which evolve into pillars, each comprised of a spherical Ga cap atop a Ga-filled	en_US
dc.publisher	Amer Physical Soc	en_US
dc.relation.ispartof	Verified OK	en_US
dc.relation.ispartof	Physical Review Letters	en_US
dc.relation.isbasedon	http://dx.doi.org/10.1103/PhysRevLett.111.135503	en_US
dc.subject	Thin-Films; Beam; Nanowires	en_US
dc.subject.classification	Condensed Matter Physics	en_US
dc.title	Spontaneous Growth of Gallium-Filled Microcapillaries on Ion-Bombarded GaN	en_US
dc.type	Journal article
utslib.citation.volume	111	en_US
utslib.citation.number	13	en_US
utslib.location	College Pk	en_US
utslib.citation.startpage	135503-1	en_US
utslib.citation.endpage	135503-5	en_US
utslib.identifier.org	SCI.Faculty of Science	en_US
utslib.for	020400	en_US
utslib.percentage	100	en_US
utslib.copyright.status	open_access

Abstract:

Bottom-up growth of microscopic pillars is observed at room temperature on GaN irradiated with a Ga+ beam in a gaseous XeF2 environment. Ion bombardment produces Ga droplets which evolve into pillars, each comprised of a spherical Ga cap atop a Ga-filled

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/27098