Response to 'Comment on 'Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence''
- Publisher:
- American Institute of Physics.
- Publication Type:
- Non-traditional Output
- Citation:
- Pauc, N. et al. 2010, 'Response to 'Comment on 'Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence''', Applied Physics Letters, American Institute of Physics., United States
- Issue Date:
- 2010
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| Filename | Description | Size | |||
|---|---|---|---|---|---|
| 2012002411OK.pdf | 226.34 kB |
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