Response to 'Comment on 'Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence''

Publisher:
American Institute of Physics.
Publication Type:
Non-traditional output
Citation:
Pauc, N. et al. 2010, 'Response to 'Comment on 'Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence''', Applied Physics Letters, American Institute of Physics., United States
Issue Date:
2010
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