Finite element design and analysis of adaptive base isolator utilizing laminated multiple magnetorheological elastomer layers

Publisher:
SAGE Publications
Publication Type:
Journal Article
Citation:
Journal of Intelligent Material Systems and Structures, 2015, 26 (14), pp. 1861 - 1870
Issue Date:
2015-09
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Available magnetorheological elastomer devices normally consist one to two layers of small-size magnetorheological elastomer materials. To be used in large-scale structures, magnetorheological elastomer devices with multiple larger magnetorheological elastomer materials are expected. This article addresses the critical issue in designing a large-scale device with multiple layers of low magnetic conductive magnetorheological elastomer materials, that is, magnetic circuit design. The primary target in magnetic circuit design for magnetorheological elastomer devices is to provide sufficient and uniform magnetic field to all magnetorheological elastomer layers in the device. In this article, finite element investigations are conducted. An innovative magnetic circuit design is proposed for magnetorheological elastomer base isolator with multi-layer of magnetorheological elastomer materials. In the design, laminated magnetorheological elastomer and steel structure is adopted as part of the magnetic core together with two steel blocks. Cylindrical steel tube is used as the yoke of the magnetic circuit. Two plates are placed on the top and bottom of the device to form enclosed magnetic path in the device. Finite element results showed that such innovative magnetic design is able to provide sufficient and uniform magnetic field to all magnetorheological elastomer layers, that is, 25 magnetorheological elastomer layers with thickness of 1 mm and diameter of 120 mm in this case. Finally, the influence of lateral deformation of the magnetorheological elastomer base isolator on the magnetic field is investigated. It is found that the magnetic field in magnetorheological elastomer materials deteriorates when the deformation of the device increases.
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