Electron irradiationinduced electromigration and diffusion of defects in Mgdoped GaN

Klein, HN; Goldys, EM; Phillips, MR; Gelhausen, O

Electron irradiationinduced electromigration and diffusion of defects in Mgdoped GaN

Klein, HN Goldys, EM Phillips, MR Gelhausen, O

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Publisher:: Wileyv C H Verlag Gmbh
Publication Type:: Journal Article
Citation:: Gelhausen Olaf et al. 2003, 'Electron irradiation-induced electro-migration and diffusion of defects in Mg-doped GaN', Wiley-v C H Verlag Gmbh, vol. 239, no. 2, pp. 310-315.
Issue Date:: 2003

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Field	Value	Language
dc.contributor.author	Klein, HN	en_US
dc.contributor.author	Goldys, EM	en_US
dc.contributor.author	Phillips, MR	en_US
dc.contributor.author	Gelhausen, O	en_US
dc.date.accessioned	2009-06-26T04:10:30Z
dc.date.available	2009-06-26T04:10:30Z
dc.date.issued	2003	en_US
dc.identifier	2003000380	en_US
dc.identifier.citation	Gelhausen Olaf et al. 2003, 'Electron irradiation-induced electro-migration and diffusion of defects in Mg-doped GaN', Wiley-v C H Verlag Gmbh, vol. 239, no. 2, pp. 310-315.	en_US
dc.identifier.issn	0370-1972	en_US
dc.identifier.other	C1	en_US
dc.identifier.uri	http://hdl.handle.net/10453/407
dc.description.abstract	In-plane and depth-resolved cathodoluminescence (Cl.) microanalysis and spectroscopy was carried out to study the impact of electron injection on electro-migration and diffusion of native defects and residual impurities in rapidly thermally annealed (RTA) Mg-doped p-type GaN. During intense electron beam irradiation (e.g. Eh = 10 keV, h= 80 nA), an electric field is generated within the primary beam interaction volume. We observed the following two electric field-related effects: (i) an increased electron recombination length and a subsequent field-assisted charge spreading, which causes a dissociation of Mg- H complexes beyond the interaction volume of the primary electron beam, and ii) thermally assisted electromigration of positively charged, mobile defects leading to the formation of deeper complexes, which are highly stable and act as nonradiative recombination pathways. Furthermore, the diffusion of electron beam-dissociated hydrogen was found to result in the passivation of Mg acceptors beyond the charge recombination volume.	en_US
dc.publisher	Wileyv C H Verlag Gmbh	en_US
dc.relation.ispartof	Physica Status Solidi Bbasic Research	en_US
dc.relation.isbasedon	http//dx.doi.org/10.1002/pssb.200301844	en_US
dc.title	Electron irradiationinduced electromigration and diffusion of defects in Mgdoped GaN	en_US
dc.type	Journal article
utslib.citation.volume	239	en_US
utslib.citation.number	2	en_US
utslib.location	Weinheim Germany	en_US
utslib.citation.startpage	310	en_US
utslib.citation.endpage	315	en_US
utslib.identifier.org	Science	en_US
utslib.copyright.status	closed_access

Abstract:

In-plane and depth-resolved cathodoluminescence (Cl.) microanalysis and spectroscopy was carried out to study the impact of electron injection on electro-migration and diffusion of native defects and residual impurities in rapidly thermally annealed (RTA) Mg-doped p-type GaN. During intense electron beam irradiation (e.g. Eh = 10 keV, h= 80 nA), an electric field is generated within the primary beam interaction volume. We observed the following two electric field-related effects: (i) an increased electron recombination length and a subsequent field-assisted charge spreading, which causes a dissociation of Mg- H complexes beyond the interaction volume of the primary electron beam, and ii) thermally assisted electromigration of positively charged, mobile defects leading to the formation of deeper complexes, which are highly stable and act as nonradiative recombination pathways. Furthermore, the diffusion of electron beam-dissociated hydrogen was found to result in the passivation of Mg acceptors beyond the charge recombination volume.

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http://hdl.handle.net/10453/407