Electron irradiationinduced electromigration and diffusion of defects in Mgdoped GaN

Wileyv C H Verlag Gmbh
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Journal article
Gelhausen Olaf et al. 2003, 'Electron irradiation-induced electro-migration and diffusion of defects in Mg-doped GaN', Wiley-v C H Verlag Gmbh, vol. 239, no. 2, pp. 310-315.
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In-plane and depth-resolved cathodoluminescence (Cl.) microanalysis and spectroscopy was carried out to study the impact of electron injection on electro-migration and diffusion of native defects and residual impurities in rapidly thermally annealed (RTA) Mg-doped p-type GaN. During intense electron beam irradiation (e.g. Eh = 10 keV, h= 80 nA), an electric field is generated within the primary beam interaction volume. We observed the following two electric field-related effects: (i) an increased electron recombination length and a subsequent field-assisted charge spreading, which causes a dissociation of Mg- H complexes beyond the interaction volume of the primary electron beam, and ii) thermally assisted electromigration of positively charged, mobile defects leading to the formation of deeper complexes, which are highly stable and act as nonradiative recombination pathways. Furthermore, the diffusion of electron beam-dissociated hydrogen was found to result in the passivation of Mg acceptors beyond the charge recombination volume.
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