Large positive magnetoresistance effect below Curie temperature in In1.90-xMn0.1SnxO3

Wang, X; Peleckis, G; Dou, S; Liu, RM; Zhu, J

Large positive magnetoresistance effect below Curie temperature in In1.90-xMn0.1SnxO3

Wang, X Peleckis, G Dou, S Liu, RM Zhu, J

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Publisher:: Amer Inst Physics
Publication Type:: Journal Article
Citation:: Wang Xiu-Hong et al. 2007, 'Large positive magnetoresistance effect below Curie temperature in In1.90-xMn0.1SnxO3', Amer Inst Physics, vol. 101, no. 9, pp. H9121-H9121.
Issue Date:: 2007

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Field	Value	Language
dc.contributor.author	Wang, X	en_US
dc.contributor.author	Peleckis, G	en_US
dc.contributor.author	Dou, S	en_US
dc.contributor.author	Liu, RM	en_US
dc.contributor.author	Zhu, J	en_US
dc.date.accessioned	2009-06-26T04:10:32Z
dc.date.available	2009-06-26T04:10:32Z
dc.date.issued	2007	en_US
dc.identifier	2006011379	en_US
dc.identifier.citation	Wang Xiu-Hong et al. 2007, 'Large positive magnetoresistance effect below Curie temperature in In1.90-xMn0.1SnxO3', Amer Inst Physics, vol. 101, no. 9, pp. H9121-H9121.	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.other	C1	en_US
dc.identifier.uri	http://hdl.handle.net/10453/451
dc.description.abstract	We report on the magnetoresistance (MR) and magnetic properties of In1.90-xMn0.1SnxO3 (0 <= x <= 0.06) oxide. All samples were found to be ferromagnetic below T-C=46 K. Sn doping changed In1.90Mn0.1O3 from an insulator to a highly conducting phase at 300	en_US
dc.publisher	Amer Inst Physics	en_US
dc.relation.ispartof	Journal Of Applied Physics	en_US
dc.relation.ispartof	Verified OK	en_US
dc.subject	tin, indium compounds, Curie temperature, doping, XANES, giant magnetoresistance, ferromagnetic materials, coercive force, electrical conductivity	en_US
dc.subject.classification	Power and Energy Systems Engineering (excl. Renewable Power)	en_US
dc.title	Large positive magnetoresistance effect below Curie temperature in In1.90-xMn0.1SnxO3	en_US
dc.type	Journal article
utslib.citation.volume	101	en_US
utslib.citation.number	9	en_US
utslib.location	NY, USA	en_US
utslib.citation.startpage	H9121	en_US
utslib.citation.endpage	H9121	en_US
utslib.identifier.org	FEIT.School of Elec, Mech and Mechatronic Systems	en_US
utslib.for	090607	en_US
utslib.percentage	50	en_US
utslib.copyright.status	closed_access

Abstract:

We report on the magnetoresistance (MR) and magnetic properties of In1.90-xMn0.1SnxO3 (0 <= x <= 0.06) oxide. All samples were found to be ferromagnetic below T-C=46 K. Sn doping changed In1.90Mn0.1O3 from an insulator to a highly conducting phase at 300

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http://hdl.handle.net/10453/451