Measuring the electronic structure of disordered overlayers by electron momentum spectroscopy the CuSi interface

John Wiley & Sons Ltd
Publication Type:
Journal Article
Surface And Interface Analysis, 2006, 38 (8), pp. 1236 - 1241
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The Cu-Si interface was studied by electron momentum spectroscopy. A thick disordered interface is formed if one material is deposited on the other. Electron momentum spectroscopy measures intensity as a function of binding energy and target electron mom
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