Measuring the electronic structure of disordered overlayers by electron momentum spectroscopy: The Cu/Si interface

Nixon, KL; Vos, M; Bewles, C; Ford, MJ

Measuring the electronic structure of disordered overlayers by electron momentum spectroscopy: The Cu/Si interface

Nixon, KL Vos, M Bewles, C Ford, MJ

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Publication Type:: Journal Article
Citation:: Surface and Interface Analysis, 2006, 38 (8), pp. 1236 - 1241
Issue Date:: 2006-08-01

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Field	Value	Language
dc.contributor.author	Nixon, KL	en_US
dc.contributor.author	Vos, M	en_US
dc.contributor.author	Bewles, C	en_US
dc.contributor.author	Ford, MJ https://orcid.org/0000-0002-8595-5900	en_US
dc.date.issued	2006-08-01	en_US
dc.identifier.citation	Surface and Interface Analysis, 2006, 38 (8), pp. 1236 - 1241	en_US
dc.identifier.issn	0142-2421	en_US
dc.identifier.uri	http://hdl.handle.net/10453/600
dc.description.abstract	The Cu-Si interface was studied by electron momentum spectroscopy. A thick disordered interface is formed if one material is deposited on the other. Electron momentum spectroscopy measures intensity as a function of binding energy and target electron momentum. Momentum resolution is demonstrated to be very helpful in interpreting the data, even for these disordered interfaces. The interface layer has a well-defined electronic structure, different from either Si or Cu, and consistent with silicide formation. Information is obtained about the total bandwidth of the interface compound, effective Brillouin zone size and Fermi radius. No clear differences are observed in the electronic structure of the interface layer for Si deposited on Cu or Cu deposited on Si. Copyright © 2006 John Wiley & Sons, Ltd.	en_US
dc.relation.ispartof	Surface and Interface Analysis	en_US
dc.relation.isbasedon	10.1002/sia.2385	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Measuring the electronic structure of disordered overlayers by electron momentum spectroscopy: The Cu/Si interface	en_US
dc.type	Journal Article
utslib.citation.volume	8	en_US
utslib.citation.volume	38	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0306 Physical Chemistry (incl. Structural)	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/DVC (Research)
utslib.copyright.status	closed_access
pubs.issue	8	en_US
pubs.publication-status	Published	en_US
pubs.volume	38	en_US

Abstract:

The Cu-Si interface was studied by electron momentum spectroscopy. A thick disordered interface is formed if one material is deposited on the other. Electron momentum spectroscopy measures intensity as a function of binding energy and target electron momentum. Momentum resolution is demonstrated to be very helpful in interpreting the data, even for these disordered interfaces. The interface layer has a well-defined electronic structure, different from either Si or Cu, and consistent with silicide formation. Information is obtained about the total bandwidth of the interface compound, effective Brillouin zone size and Fermi radius. No clear differences are observed in the electronic structure of the interface layer for Si deposited on Cu or Cu deposited on Si. Copyright © 2006 John Wiley & Sons, Ltd.

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http://hdl.handle.net/10453/600