Uniform MgB<inf>2</inf> thin films grown on Si(111) and Al<inf>2</inf> O<inf>3</inf> (0001) substrates prepared by e-beam evaporation and in situ annealing methods
- Publication Type:
- Journal Article
- Journal of Applied Physics, 2006, 99 (8)
- Issue Date:
Copyright Clearance Process
- Recently Added
- In Progress
- Closed Access
This item is closed access and not available.
Mg B2 superconducting thin films on Si(111) and Al2 O3 (0001) substrates were prepared by high vacuum e-beam evaporation and two-step in situ annealing techniques. The precursor films [B (100 Å) Mg (151 Å)] 6 Al2 O3 (or Si) were deposited at room temperature and 1× 10-7 mbar of background vacuum, then annealed in situ at 630 °C for 30 min in an argon atmosphere of 150 Pa. The atomic force microscopy image showed that the films were uniform with grain sizes of about 100 nm. An extremely sharp superconducting transition with a width of 0.1 K and a zero-resistance temperature of 30.3 K was obtained, indicating a film of high uniformity and purity in its phase with perfect connection between the Mg B2 grains. © 2006 American Institute of Physics.
Please use this identifier to cite or link to this item: