Evolution of epitaxial graphene layers on 3C SiC/Si (1 1 1) as a function of annealing temperature in UHV

Gupta, B; Notarianni, M; Mishra, N; Shafiei, M; Iacopi, F; Motta, N

Evolution of epitaxial graphene layers on 3C SiC/Si (1 1 1) as a function of annealing temperature in UHV

Gupta, B Notarianni, M Mishra, N

Shafiei, M Iacopi, F

Motta, N

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Publication Type:: Journal Article
Citation:: Carbon, 2014, 68 pp. 563 - 572
Issue Date:: 2014-03-01

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Field	Value	Language
dc.contributor.author	Gupta, B	en_US
dc.contributor.author	Notarianni, M	en_US
dc.contributor.author	Mishra, N https://orcid.org/0000-0003-3930-6210	en_US
dc.contributor.author	Shafiei, M	en_US
dc.contributor.author	Iacopi, F https://orcid.org/0000-0002-3196-0990	en_US
dc.contributor.author	Motta, N	en_US
dc.date.issued	2014-03-01	en_US
dc.identifier.citation	Carbon, 2014, 68 pp. 563 - 572	en_US
dc.identifier.issn	0008-6223	en_US
dc.identifier.uri	http://hdl.handle.net/10453/118754
dc.description.abstract	The growth of graphene on SiC/Si substrates is an appealing alternative to the growth on bulk SiC for cost reduction and to better integrate the material with Si based electronic devices. In this paper, we present a thorough in situ study of the growth of epitaxial graphene on 3C SiC (1 1 1)/Si (1 1 1) substrates via high temperature annealing (ranging from 1125 to 1375 C) in ultra high vacuum (UHV). The quality and number of graphene layers have been investigated by using X-ray Photoelectron Spectroscopy (XPS), while the surface characterization have been studied by Scanning Tunnelling Microscopy (STM). Ex-situ Raman spectroscopy measurements confirm our findings, which demonstrate the exponential dependence of the number of graphene layers on the annealing temperature. © 2013 Elsevier Ltd. All rights reserved.	en_US
dc.relation.ispartof	Carbon	en_US
dc.relation.isbasedon	10.1016/j.carbon.2013.11.035	en_US
dc.rights	info:eu-repo/semantics/openAccess
dc.subject.classification	Nanoscience & Nanotechnology	en_US
dc.title	Evolution of epitaxial graphene layers on 3C SiC/Si (1 1 1) as a function of annealing temperature in UHV	en_US
dc.type	Journal Article
utslib.citation.volume	68	en_US
utslib.for	030306 Synthesis of Materials	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	03 Chemical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	open_access	*
pubs.publication-status	Published	en_US
pubs.volume	68	en_US

Abstract:

The growth of graphene on SiC/Si substrates is an appealing alternative to the growth on bulk SiC for cost reduction and to better integrate the material with Si based electronic devices. In this paper, we present a thorough in situ study of the growth of epitaxial graphene on 3C SiC (1 1 1)/Si (1 1 1) substrates via high temperature annealing (ranging from 1125 to 1375 C) in ultra high vacuum (UHV). The quality and number of graphene layers have been investigated by using X-ray Photoelectron Spectroscopy (XPS), while the surface characterization have been studied by Scanning Tunnelling Microscopy (STM). Ex-situ Raman spectroscopy measurements confirm our findings, which demonstrate the exponential dependence of the number of graphene layers on the annealing temperature. © 2013 Elsevier Ltd. All rights reserved.

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http://hdl.handle.net/10453/118754