Solid source growth of graphene with Ni-Cu catalysts: Towards high quality in situ graphene on silicon

Mishra, N; Boeckl, JJ; Tadich, A; Jones, RT; Pigram, PJ; Edmonds, M; Fuhrer, MS; Nichols, BM; Iacopi, F

Solid source growth of graphene with Ni-Cu catalysts: Towards high quality in situ graphene on silicon

Mishra, N

Boeckl, JJ Tadich, A Jones, RT Pigram, PJ Edmonds, M Fuhrer, MS Nichols, BM Iacopi, F

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Publication Type:: Journal Article
Citation:: Journal of Physics D: Applied Physics, 2017, 50 (9)
Issue Date:: 2017-02-01

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Field	Value	Language
dc.contributor.author	Mishra, N https://orcid.org/0000-0003-3930-6210	en_US
dc.contributor.author	Boeckl, JJ	en_US
dc.contributor.author	Tadich, A	en_US
dc.contributor.author	Jones, RT	en_US
dc.contributor.author	Pigram, PJ	en_US
dc.contributor.author	Edmonds, M	en_US
dc.contributor.author	Fuhrer, MS	en_US
dc.contributor.author	Nichols, BM	en_US
dc.contributor.author	Iacopi, F https://orcid.org/0000-0002-3196-0990	en_US
dc.date.issued	2017-02-01	en_US
dc.identifier.citation	Journal of Physics D: Applied Physics, 2017, 50 (9)	en_US
dc.identifier.issn	0022-3727	en_US
dc.identifier.uri	http://hdl.handle.net/10453/124843
dc.description.abstract	© 2017 IOP Publishing Ltd. We obtain a monolayer graphene on epitaxial silicon carbide on silicon substrates via solid source growth mediated by a thin Ni-Cu alloy. Raman spectroscopy consistently shows an ID/IG band ratio as low as ∼0.2, indicating that the graphene obtained through this method is to-date the best quality monolayer grown on epitaxial silicon carbide films on silicon. We describe the key steps behind the graphene synthesis on the basis of extensive physical, chemical and morphological analyses. We conclude that (1) the oxidation, amorphisation and silicidation of the silicon carbide surface mediated by the Ni, (2) the liquid-phase epitaxial growth of graphene as well as (3) the self-limiting graphitization provided the molten Cu catalyst, are key characteristics of this novel synthesis method.	en_US
dc.relation.ispartof	Journal of Physics D: Applied Physics	en_US
dc.relation.isbasedon	10.1088/1361-6463/aa560b	en_US
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.classification	Applied Physics	en_US
dc.title	Solid source growth of graphene with Ni-Cu catalysts: Towards high quality in situ graphene on silicon	en_US
dc.type	Journal Article
utslib.citation.volume	9	en_US
utslib.citation.volume	50	en_US
utslib.for	0203 Classical Physics	en_US
utslib.for	0904 Chemical Engineering	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	closed_access	*
pubs.issue	9	en_US
pubs.publication-status	Published	en_US
pubs.volume	50	en_US

Abstract:

© 2017 IOP Publishing Ltd. We obtain a monolayer graphene on epitaxial silicon carbide on silicon substrates via solid source growth mediated by a thin Ni-Cu alloy. Raman spectroscopy consistently shows an ID/IG band ratio as low as ∼0.2, indicating that the graphene obtained through this method is to-date the best quality monolayer grown on epitaxial silicon carbide films on silicon. We describe the key steps behind the graphene synthesis on the basis of extensive physical, chemical and morphological analyses. We conclude that (1) the oxidation, amorphisation and silicidation of the silicon carbide surface mediated by the Ni, (2) the liquid-phase epitaxial growth of graphene as well as (3) the self-limiting graphitization provided the molten Cu catalyst, are key characteristics of this novel synthesis method.

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http://hdl.handle.net/10453/124843