Hydrogenated Nano-/Micro-Crystalline Silicon Thin-Films for Thermoelectrics

Acosta, E; Wight, NM; Smirnov, V; Buckman, J; Bennett, NS

Hydrogenated Nano-/Micro-Crystalline Silicon Thin-Films for Thermoelectrics

Acosta, E Wight, NM Smirnov, V Buckman, J Bennett, NS

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Publication Type:: Journal Article
Citation:: Journal of Electronic Materials, 2018, 47 (6), pp. 3077 - 3084
Issue Date:: 2018-06-01

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Field	Value	Language
dc.contributor.author	Acosta, E	en_US
dc.contributor.author	Wight, NM	en_US
dc.contributor.author	Smirnov, V	en_US
dc.contributor.author	Buckman, J	en_US
dc.contributor.author	Bennett, NS https://orcid.org/0000-0003-3122-4544	en_US
dc.date.issued	2018-06-01	en_US
dc.identifier.citation	Journal of Electronic Materials, 2018, 47 (6), pp. 3077 - 3084	en_US
dc.identifier.issn	0361-5235	en_US
dc.identifier.uri	http://hdl.handle.net/10453/133643
dc.description.abstract	© 2017, The Minerals, Metals & Materials Society. Thermoelectric technology has not yet been able to reach full-scale market penetration partly because most commercial materials employed are scarce/costly, environmentally unfriendly and in addition provide low conversion efficiency. The necessity to tackle some of these hurdles leads us to investigate the suitability of n-type hydrogenated microcrystalline silicon (μc-Si: H) in the fabrication of thermoelectric devices, produced by plasma enhanced chemical vapour deposition (PECVD), which is a mature process of proven scalability. This study reports an approach to optimise the thermoelectric power factor (PF) by varying the dopant concentration by means of post-annealing without impacting film morphology, at least for temperatures below 550°C. Results show an improvement in PF of more than 80%, which is driven by a noticeable increase of carrier mobility and Seebeck coefficient in spite of a reduction in carrier concentration. A PF of 2.08 × 10−4 W/mK2 at room temperature is reported for n-type films of 1 μm thickness, which is in line with the best values reported in recent literature for similar structures.	en_US
dc.relation.ispartof	Journal of Electronic Materials	en_US
dc.relation.isbasedon	10.1007/s11664-017-5977-8	en_US
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.classification	Applied Physics	en_US
dc.title	Hydrogenated Nano-/Micro-Crystalline Silicon Thin-Films for Thermoelectrics	en_US
dc.type	Journal Article
utslib.citation.volume	6	en_US
utslib.citation.volume	47	en_US
utslib.for	0906 Electrical and Electronic Engineering	en_US
utslib.for	0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics	en_US
utslib.for	1099 Other Technology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Mechanical and Mechatronic Engineering
utslib.copyright.status	closed_access	*
pubs.issue	6	en_US
pubs.publication-status	Published	en_US
pubs.volume	47	en_US

Abstract:

© 2017, The Minerals, Metals & Materials Society. Thermoelectric technology has not yet been able to reach full-scale market penetration partly because most commercial materials employed are scarce/costly, environmentally unfriendly and in addition provide low conversion efficiency. The necessity to tackle some of these hurdles leads us to investigate the suitability of n-type hydrogenated microcrystalline silicon (μc-Si: H) in the fabrication of thermoelectric devices, produced by plasma enhanced chemical vapour deposition (PECVD), which is a mature process of proven scalability. This study reports an approach to optimise the thermoelectric power factor (PF) by varying the dopant concentration by means of post-annealing without impacting film morphology, at least for temperatures below 550°C. Results show an improvement in PF of more than 80%, which is driven by a noticeable increase of carrier mobility and Seebeck coefficient in spite of a reduction in carrier concentration. A PF of 2.08 × 10−4 W/mK2 at room temperature is reported for n-type films of 1 μm thickness, which is in line with the best values reported in recent literature for similar structures.

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http://hdl.handle.net/10453/133643