High-efficiency Doherty power amplifier with wide OPBO range for base station systems

Cheng, Z; Xiong, G; Liu, Y; Zhang, T; Tian, J; Guo, YJ

High-efficiency Doherty power amplifier with wide OPBO range for base station systems

Cheng, Z Xiong, G Liu, Y Zhang, T

Tian, J Guo, YJ

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Publication Type:: Journal Article
Citation:: IET Microwaves, Antennas and Propagation, 2019, 13 (7), pp. 926 - 929
Issue Date:: 2019-06-12

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Field	Value	Language
dc.contributor.author	Cheng, Z	en_US
dc.contributor.author	Xiong, G	en_US
dc.contributor.author	Liu, Y	en_US
dc.contributor.author	Zhang, T https://orcid.org/0000-0001-6436-125X	en_US
dc.contributor.author	Tian, J	en_US
dc.contributor.author	Guo, YJ https://orcid.org/0000-0001-6008-9682	en_US
dc.date.available	2021-08-12T19:00:56Z
dc.date.issued	2019-06-12	en_US
dc.identifier.citation	IET Microwaves, Antennas and Propagation, 2019, 13 (7), pp. 926 - 929	en_US
dc.identifier.issn	1751-8725	en_US
dc.identifier.uri	http://hdl.handle.net/10453/135411
dc.description.abstract	© The Institution of Engineering and Technology 2019. A high-efficiency, S-band Doherty power amplifier (DPA) with wide output power back-off (OPBO) range is presented. A novel parasitic capacitance compensation approach is applied at the output of Cree's GaN high-electron-mobility transistor to achieve high saturation efficiency in a wide OPBO range. Specifically, a parallel shorting microstrip line between the transistor output and its match network is adopted to realise parasitic capacitance compensation. The measurement results indicate good Doherty behaviour with 10 dB back-off efficiency of 40.6-44.2% and saturation efficiency of 70.2-73.3% over 2.9-3.3 GHz. When stimulated by a 20-MHz LTE signal with 7.5 dB PAPR, the proposed Doherty amplifier power, combined with digital predistortion, achieved adjacent channel leakage ratios below -47.2 dBc. The DPA demonstrate superior performance in OPBO range and efficiency, which makes it an ideal component for base station communication systems.	en_US
dc.relation.ispartof	IET Microwaves, Antennas and Propagation	en_US
dc.relation.isbasedon	10.1049/iet-map.2018.5617	en_US
dc.rights	info:eu-repo/semantics/embargoedAccess
dc.subject.classification	Networking & Telecommunications	en_US
dc.title	High-efficiency Doherty power amplifier with wide OPBO range for base station systems	en_US
dc.type	Journal Article
utslib.citation.volume	7	en_US
utslib.citation.volume	13	en_US
utslib.for	0906 Electrical and Electronic Engineering	en_US
utslib.for	1005 Communications Technologies	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - GBDTC - Global Big Data Technologies
utslib.copyright.status	open_access	*
pubs.issue	7	en_US
pubs.publication-status	Published	en_US
pubs.volume	13	en_US

Abstract:

© The Institution of Engineering and Technology 2019. A high-efficiency, S-band Doherty power amplifier (DPA) with wide output power back-off (OPBO) range is presented. A novel parasitic capacitance compensation approach is applied at the output of Cree's GaN high-electron-mobility transistor to achieve high saturation efficiency in a wide OPBO range. Specifically, a parallel shorting microstrip line between the transistor output and its match network is adopted to realise parasitic capacitance compensation. The measurement results indicate good Doherty behaviour with 10 dB back-off efficiency of 40.6-44.2% and saturation efficiency of 70.2-73.3% over 2.9-3.3 GHz. When stimulated by a 20-MHz LTE signal with 7.5 dB PAPR, the proposed Doherty amplifier power, combined with digital predistortion, achieved adjacent channel leakage ratios below -47.2 dBc. The DPA demonstrate superior performance in OPBO range and efficiency, which makes it an ideal component for base station communication systems.

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http://hdl.handle.net/10453/135411