Graphene growth on silicon carbide: A review (Phys. Status Solidi A 9∕2016)

Mishra, N Boeckl, J Motta, N Iacopi, F

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Publication Type:: Journal Article
Citation:: Physica Status Solidi (A) Applications and Materials Science, 2016, 213 (9), pp. 2269 - ?
Issue Date:: 2016-09-01

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Field	Value	Language
dc.contributor.author	Mishra, N	en_US
dc.contributor.author	Boeckl, J	en_US
dc.contributor.author	Motta, N	en_US
dc.contributor.author	Iacopi, F https://orcid.org/0000-0002-3196-0990	en_US
dc.date.issued	2016-09-01	en_US
dc.identifier.citation	Physica Status Solidi (A) Applications and Materials Science, 2016, 213 (9), pp. 2269 - ?	en_US
dc.identifier.issn	1862-6300	en_US
dc.identifier.uri	http://hdl.handle.net/10453/139253
dc.relation.ispartof	Physica Status Solidi (A) Applications and Materials Science	en_US
dc.relation.isbasedon	10.1002/pssa.201670657	en_US
dc.rights	info:eu-repo/semantics/openAccess
dc.subject.classification	Applied Physics	en_US
dc.title	Graphene growth on silicon carbide: A review (Phys. Status Solidi A 9∕2016)	en_US
dc.type	Journal Article
utslib.citation.volume	9	en_US
utslib.citation.volume	213	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	1007 Nanotechnology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	open_access	*
pubs.issue	9	en_US
pubs.publication-status	Published	en_US
pubs.volume	213	en_US

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