Optimizing Thermoelectric Power Factor in p-Type Hydrogenated Nano-crystalline Silicon Thin Films by Varying Carrier Concentration

Acosta, E; Smirnov, V; Szabo, PSB; Buckman, J; Bennett, NS

Optimizing Thermoelectric Power Factor in p-Type Hydrogenated Nano-crystalline Silicon Thin Films by Varying Carrier Concentration

Acosta, E Smirnov, V Szabo, PSB Buckman, J Bennett, NS

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Publisher:: SPRINGER
Publication Type:: Journal Article
Citation:: Journal of Electronic Materials, 2019, 48, (4), pp. 2085-2094
Issue Date:: 2019-04-15

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Field	Value	Language
dc.contributor.author	Acosta, E
dc.contributor.author	Smirnov, V
dc.contributor.author	Szabo, PSB
dc.contributor.author	Buckman, J
dc.contributor.author	Bennett, NS
dc.date.accessioned	2020-05-07T04:47:03Z
dc.date.available	2020-05-07T04:47:03Z
dc.date.issued	2019-04-15
dc.identifier.citation	Journal of Electronic Materials, 2019, 48, (4), pp. 2085-2094
dc.identifier.issn	0361-5235
dc.identifier.issn	1543-186X
dc.identifier.uri	http://hdl.handle.net/10453/140540
dc.description.abstract	© 2019, The Minerals, Metals & Materials Society. Most approaches to silicon-based thermoelectrics are focused on reducing the lattice thermal conductivity with minimal deterioration of the thermoelectric power factor. This study investigates the potential of p-type hydrogenated nano-crystalline silicon thin films (μc-Si:H), produced by plasma-enhanced chemical vapor deposition, for thermoelectric applications. We adopt this heterogeneous material structure, known to have a very low thermal conductivity (~ 1 W/m K), in order to obtain an optimized power factor through controlled variation of carrier concentration drawing on stepwise annealing. This approach achieves a best thermoelectric power factor of ~ 3 × 10 −4 W/mK 2 at a carrier concentration of ~ 4.5 × 10 19 cm 3 derived from a significant increase of electrical conductivity ~ × 8, alongside a less pronounced reduction of the Seebeck coefficient, while retaining a low thermal conductivity. These thin films have a good thermal and mechanical stability up to 500°C with appropriate adhesion at the film/substrate interface.
dc.language	English
dc.publisher	SPRINGER
dc.relation.ispartof	Journal of Electronic Materials
dc.relation.isbasedon	10.1007/s11664-019-07036-6
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject	0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics, 0906 Electrical and Electronic Engineering, 1099 Other Technology
dc.subject.classification	Applied Physics
dc.title	Optimizing Thermoelectric Power Factor in p-Type Hydrogenated Nano-crystalline Silicon Thin Films by Varying Carrier Concentration
dc.type	Journal Article
utslib.citation.volume	48
utslib.for	0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics
utslib.for	0906 Electrical and Electronic Engineering
utslib.for	1099 Other Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Mechanical and Mechatronic Engineering
pubs.organisational-group	/University of Technology Sydney
utslib.copyright.status	closed_access	*
pubs.consider-herdc	false
dc.date.updated	2020-05-07T04:47:00Z
pubs.issue	4
pubs.publication-status	Published
pubs.volume	48
utslib.start-page	2085
utslib.citation.issue	4

Abstract:

© 2019, The Minerals, Metals & Materials Society. Most approaches to silicon-based thermoelectrics are focused on reducing the lattice thermal conductivity with minimal deterioration of the thermoelectric power factor. This study investigates the potential of p-type hydrogenated nano-crystalline silicon thin films (μc-Si:H), produced by plasma-enhanced chemical vapor deposition, for thermoelectric applications. We adopt this heterogeneous material structure, known to have a very low thermal conductivity (~ 1 W/m K), in order to obtain an optimized power factor through controlled variation of carrier concentration drawing on stepwise annealing. This approach achieves a best thermoelectric power factor of ~ 3 × 10 −4 W/mK 2 at a carrier concentration of ~ 4.5 × 10 19 cm 3 derived from a significant increase of electrical conductivity ~ × 8, alongside a less pronounced reduction of the Seebeck coefficient, while retaining a low thermal conductivity. These thin films have a good thermal and mechanical stability up to 500°C with appropriate adhesion at the film/substrate interface.

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http://hdl.handle.net/10453/140540