Electronic and Transport Properties of Epitaxial Graphene on SiC and 3C-SiC/Si: A Review

Pradeepkumar, A; Gaskill, DK; Iacopi, F

Electronic and Transport Properties of Epitaxial Graphene on SiC and 3C-SiC/Si: A Review

Pradeepkumar, A Gaskill, DK Iacopi, F

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Publisher:: MDPI AG
Publication Type:: Journal Article
Citation:: Applied Sciences, 10, (12), pp. 4350-4350

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Field	Value	Language
dc.contributor.author	Pradeepkumar, A
dc.contributor.author	Gaskill, DK
dc.contributor.author	Iacopi, F https://orcid.org/0000-0002-3196-0990
dc.date.accessioned	2020-07-20T00:30:07Z
dc.date.available	2020-07-20T00:30:07Z
dc.identifier.citation	Applied Sciences, 10, (12), pp. 4350-4350
dc.identifier.issn	2076-3417
dc.identifier.uri	http://hdl.handle.net/10453/141806
dc.description.abstract	<jats:p>The electronic and transport properties of epitaxial graphene are dominated by the interactions the material makes with its surroundings. Based on the transport properties of epitaxial graphene on SiC and 3C-SiC/Si substrates reported in the literature, we emphasize that the graphene interfaces formed between the active material and its environment are of paramount importance, and how interface modifications enable the fine-tuning of the transport properties of graphene. This review provides a renewed attention on the understanding and engineering of epitaxial graphene interfaces for integrated electronics and photonics applications.</jats:p>
dc.language	en
dc.publisher	MDPI AG
dc.relation.ispartof	Applied Sciences
dc.relation.isbasedon	10.3390/app10124350
dc.rights	info:eu-repo/semantics/openAccess
dc.title	Electronic and Transport Properties of Epitaxial Graphene on SiC and 3C-SiC/Si: A Review
dc.type	Journal Article
utslib.citation.volume	10
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney
utslib.copyright.status	open_access	*
dc.date.updated	2020-07-20T00:29:57Z
pubs.issue	12
pubs.publication-status	Published online
pubs.volume	10
utslib.citation.issue	12

Abstract:

The electronic and transport properties of epitaxial graphene are dominated by the interactions the material makes with its surroundings. Based on the transport properties of epitaxial graphene on SiC and 3C-SiC/Si substrates reported in the literature, we emphasize that the graphene interfaces formed between the active material and its environment are of paramount importance, and how interface modifications enable the fine-tuning of the transport properties of graphene. This review provides a renewed attention on the understanding and engineering of epitaxial graphene interfaces for integrated electronics and photonics applications.

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http://hdl.handle.net/10453/141806