Ka-band marchand balun with edge-and broadside-coupled hybrid configuration
- Publisher:
- MDPI AG
- Publication Type:
- Journal Article
- Citation:
- Electronics (Switzerland), 2020, 9, (7), pp. 1-9
- Issue Date:
- 2020-07-01
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© 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article presents a novel Ka-band Marchand balun implemented in 0.13-µm SiGe bipolar complementary metal–oxide–semiconductor (BiCMOS) process. By combining both edge-and broadside-coupled structures, the new hybrid balun is able to increase the coupling and minimize the balun insertion loss. As compared with conventional edge-coupled or broadside-coupled structures, the proposed balun achieves the lowest insertion loss of 1.02 dB across a wide 1-dB bandwidth from 29.0 GHz to 46.0 GHz, with a core size of 270 µm × 280 µm.
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