A Compact Design Using GaN Semiconductor Devices for a Flying Capacitor Five-Level Inverter

Farhangi, M; Siwakoti, YP; Barzegarkhoo, R; Hasan, SU; Lu, D; Rogers, D

A Compact Design Using GaN Semiconductor Devices for a Flying Capacitor Five-Level Inverter

Farhangi, M Siwakoti, YP Barzegarkhoo, R Hasan, SU Lu, D

Rogers, D

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Publisher:: IEEE
Publication Type:: Conference Proceeding
Citation:: 2021 IEEE Energy Conversion Congress and Exposition (ECCE), 2021, 00, pp. 2475-2479
Issue Date:: 2021-11-16

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Field	Value	Language
dc.contributor.author	Farhangi, M
dc.contributor.author	Siwakoti, YP
dc.contributor.author	Barzegarkhoo, R
dc.contributor.author	Hasan, SU
dc.contributor.author	Lu, D https://orcid.org/0000-0003-2145-0580
dc.contributor.author	Rogers, D
dc.date	2021-10-10
dc.date.accessioned	2022-05-27T20:26:11Z
dc.date.available	2022-05-27T20:26:11Z
dc.date.issued	2021-11-16
dc.identifier.citation	2021 IEEE Energy Conversion Congress and Exposition (ECCE), 2021, 00, pp. 2475-2479
dc.identifier.isbn	9781728151359
dc.identifier.uri	http://hdl.handle.net/10453/157772
dc.description.abstract	Multilevel inverters (MLIs) based on the flying capacitor (FC) concept are beneficial in many renewable energy-based applications due to their compactness, low current stress on semiconductor devices, and reasonable thermal behavior for high-power applications. However, the recently developed FC-based topologies suffer from half dc-link voltage utilization and a variable high-frequency common-mode voltage (HF-CMV). The aim of this paper is to propose an FC-based family of MLIs with a five-level (5L) output voltage, full dc-link voltage utilization, and low HF-CMV. Using redundant states and the phase-shifted sinusoidal PWM technique, the value of the flying capacitor has been reduced significantly. The performance of the converter has been verified using Gallium Nitride (GaN) power switches. Circuit description and a brief comparative study with existing MLIs are given to justify the suitability of the topology.
dc.language	en
dc.publisher	IEEE
dc.relation.ispartof	2021 IEEE Energy Conversion Congress and Exposition (ECCE)
dc.relation.ispartof	2021 IEEE Energy Conversion Congress and Exposition
dc.relation.isbasedon	10.1109/ecce47101.2021.9595266
dc.rights	info:eu-repo/semantics/openAccess
dc.title	A Compact Design Using GaN Semiconductor Devices for a Flying Capacitor Five-Level Inverter
dc.type	Conference Proceeding
utslib.citation.volume	00
utslib.location.activity	Vancouver, BC, Canada
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	open_access	*
dc.date.updated	2022-05-27T20:26:08Z
pubs.finish-date	2021-10-14
pubs.publication-status	Published
pubs.start-date	2021-10-10
pubs.volume	00

Abstract:

Multilevel inverters (MLIs) based on the flying capacitor (FC) concept are beneficial in many renewable energy-based applications due to their compactness, low current stress on semiconductor devices, and reasonable thermal behavior for high-power applications. However, the recently developed FC-based topologies suffer from half dc-link voltage utilization and a variable high-frequency common-mode voltage (HF-CMV). The aim of this paper is to propose an FC-based family of MLIs with a five-level (5L) output voltage, full dc-link voltage utilization, and low HF-CMV. Using redundant states and the phase-shifted sinusoidal PWM technique, the value of the flying capacitor has been reduced significantly. The performance of the converter has been verified using Gallium Nitride (GaN) power switches. Circuit description and a brief comparative study with existing MLIs are given to justify the suitability of the topology.

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http://hdl.handle.net/10453/157772