320 GHz On-Chip Circularly-Polarized Antenna Array Realized with 0.13 μm BiCMOS Technology

Publication Type:
Conference Proceeding
2020 IEEE International Symposium on Antennas and Propagation and North American Radio Science Meeting, IEEECONF 2020 - Proceedings, 2021, 00, pp. 1467-1468
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A 320 GHz on-chip circularly-polarized (CP) antenna array that has been facilitated with 0.13 μm SiGe BiCMOS technology is presented. It is the first designed and prototyped THz-band on-chip antenna array with circular polarization and high directivity. The antenna is realized by designing a 4 \times 4 microstrip-fed CP patch antenna array inside the silicon dioxide layer on top of a silicon base. A sequential phase rotation scheme is applied to the four 2 \times 2 subarrays to achieve wide axial ratio (AR) bandwidth (8.7 GHz). The antenna array was successfully prototyped in a 3.6\times 3.6 mm2 area on a silicon wafer. Consequently, it easily combined with other integrated circuit (IC) components. The developed THz on-chip CP antenna is highly desired for the emerging ultra-high speed wireless applications.
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