320 GHz On-Chip Circularly-Polarized Antenna Array Realized with 0.13 μm BiCMOS Technology

Lin, W; Ziolkowski, RW; Ahmad, WA; Yang, Y; Yuan, L; Ng, HJ; Wang, Y; Kissinger, D

320 GHz On-Chip Circularly-Polarized Antenna Array Realized with 0.13 μm BiCMOS Technology

Lin, W

Ziolkowski, RW Ahmad, WA Yang, Y

Yuan, L Ng, HJ Wang, Y Kissinger, D

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Publisher:: IEEE
Publication Type:: Conference Proceeding
Citation:: 2020 IEEE International Symposium on Antennas and Propagation and North American Radio Science Meeting, IEEECONF 2020 - Proceedings, 2021, 00, pp. 1467-1468
Issue Date:: 2021-07-05

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Field	Value	Language
dc.contributor.author	Lin, W https://orcid.org/0000-0003-0337-8554
dc.contributor.author	Ziolkowski, RW
dc.contributor.author	Ahmad, WA
dc.contributor.author	Yang, Y https://orcid.org/0000-0001-7439-2156
dc.contributor.author	Yuan, L
dc.contributor.author	Ng, HJ
dc.contributor.author	Wang, Y
dc.contributor.author	Kissinger, D
dc.date	2020-07-05
dc.date.accessioned	2022-06-14T00:44:00Z
dc.date.available	2022-06-14T00:44:00Z
dc.date.issued	2021-07-05
dc.identifier.citation	2020 IEEE International Symposium on Antennas and Propagation and North American Radio Science Meeting, IEEECONF 2020 - Proceedings, 2021, 00, pp. 1467-1468
dc.identifier.isbn	9781728166704
dc.identifier.issn	1522-3965
dc.identifier.issn	1947-1491
dc.identifier.uri	http://hdl.handle.net/10453/158144
dc.description.abstract	A 320 GHz on-chip circularly-polarized (CP) antenna array that has been facilitated with 0.13 μm SiGe BiCMOS technology is presented. It is the first designed and prototyped THz-band on-chip antenna array with circular polarization and high directivity. The antenna is realized by designing a 4 \times 4 microstrip-fed CP patch antenna array inside the silicon dioxide layer on top of a silicon base. A sequential phase rotation scheme is applied to the four 2 \times 2 subarrays to achieve wide axial ratio (AR) bandwidth (8.7 GHz). The antenna array was successfully prototyped in a 3.6\times 3.6 mm2 area on a silicon wafer. Consequently, it easily combined with other integrated circuit (IC) components. The developed THz on-chip CP antenna is highly desired for the emerging ultra-high speed wireless applications.
dc.language	en
dc.publisher	IEEE
dc.relation.ispartof	2020 IEEE International Symposium on Antennas and Propagation and North American Radio Science Meeting, IEEECONF 2020 - Proceedings
dc.relation.ispartof	IEEE International Symposium on Antennas and Propagation and North American Radio Science Meeting
dc.relation.ispartofseries	IEEE Antennas and Propagation Society International Symposium
dc.relation.isbasedon	10.1109/IEEECONF35879.2020.9329666
dc.rights	info:eu-repo/semantics/openAccess
dc.title	320 GHz On-Chip Circularly-Polarized Antenna Array Realized with 0.13 μm BiCMOS Technology
dc.type	Conference Proceeding
utslib.citation.volume	00
utslib.location.activity	Montreal, QC, Canada
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Strength - GBDTC - Global Big Data Technologies
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	open_access	*
pubs.consider-herdc	false
dc.date.updated	2022-06-14T00:43:59Z
pubs.finish-date	2020-07-10
pubs.place-of-publication	Piscataway, USA
pubs.publication-status	Published
pubs.start-date	2020-07-05
pubs.volume	00
dc.location	Piscataway, USA

Abstract:

A 320 GHz on-chip circularly-polarized (CP) antenna array that has been facilitated with 0.13 μm SiGe BiCMOS technology is presented. It is the first designed and prototyped THz-band on-chip antenna array with circular polarization and high directivity. The antenna is realized by designing a 4 \times 4 microstrip-fed CP patch antenna array inside the silicon dioxide layer on top of a silicon base. A sequential phase rotation scheme is applied to the four 2 \times 2 subarrays to achieve wide axial ratio (AR) bandwidth (8.7 GHz). The antenna array was successfully prototyped in a 3.6\times 3.6 mm2 area on a silicon wafer. Consequently, it easily combined with other integrated circuit (IC) components. The developed THz on-chip CP antenna is highly desired for the emerging ultra-high speed wireless applications.

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http://hdl.handle.net/10453/158144