Positron probing of disordered regions in neutron-irradiated silicon

Arutyunov, N; Bennett, N; Wight, N; Krause-Rehberg, R; Emtsev, V; Abrosimov, N; Kozlovski, V

Positron probing of disordered regions in neutron-irradiated silicon

Arutyunov, N Bennett, N

Wight, N Krause-Rehberg, R Emtsev, V Abrosimov, N Kozlovski, V

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Publisher:: WILEY-V C H VERLAG GMBH
Publication Type:: Journal Article
Citation:: Physica Status Solidi (B) Basic Research, 2016, 253, (11), pp. 2175-2179
Issue Date:: 2016-11-01

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Field	Value	Language
dc.contributor.author	Arutyunov, N
dc.contributor.author	Bennett, N https://orcid.org/0000-0003-3122-4544
dc.contributor.author	Wight, N
dc.contributor.author	Krause-Rehberg, R
dc.contributor.author	Emtsev, V
dc.contributor.author	Abrosimov, N
dc.contributor.author	Kozlovski, V
dc.date.accessioned	2022-07-31T03:32:11Z
dc.date.available	2022-07-31T03:32:11Z
dc.date.issued	2016-11-01
dc.identifier.citation	Physica Status Solidi (B) Basic Research, 2016, 253, (11), pp. 2175-2179
dc.identifier.issn	0370-1972
dc.identifier.issn	1521-3951
dc.identifier.uri	http://hdl.handle.net/10453/159417
dc.description.abstract	The vacancy-rich disordered regions (DR) playing a key role in improving the thermoelectric figure-of-merit of silicon thermoelectric generators by reducing (by ∼90%) the thermal conductivity, have been probed with positrons. The DR were created by irradiating n-Cz-Si(P) material with the fast reactor neutrons. The parameter of the electron density rs′ ≈ 2.18 a.u. contacting positrons in DR has been reconstructed using the data of the angular correlation of the annihilation radiation (ACAR); the amendments to the rs′ value associated with the ion core electrons were taken into account. It is argued that the ion cores of atoms of silicon as well as the ones of the as-grown impurities (O, C) are involved in the open vacancy volume to be probed with positrons: a relaxation of the ion cores directed inward toward the vacancy volume seems to take place. These positron traps are formed beyond the vacancy-rich area of the disordered region. In the course of isochronal annealing, the traps are stable up to Tanneal. ≈ 520 °C when a recovery of ACAR parameters begins and then it continues up to ∼1050 °C. A vacancy center containing positrons in the open vacancy volume beyond the vacancy-rich area of the disordered region is shown schematically. The emission of electron–positron annihilation gamma-quanta dominates from within these positron traps. The values of both the electron–positron ion core radius (rm) and electron density (parameter rs′) suggest a relaxation directed toward inwards the open vacancy volume: the impurity atoms of oxygen and carbon are, perhaps, involved in the center.
dc.language	English
dc.publisher	WILEY-V C H VERLAG GMBH
dc.relation.ispartof	Physica Status Solidi (B) Basic Research
dc.relation.isbasedon	10.1002/pssb.201600644
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject	0204 Condensed Matter Physics, 0206 Quantum Physics, 1007 Nanotechnology
dc.subject.classification	Applied Physics
dc.title	Positron probing of disordered regions in neutron-irradiated silicon
dc.type	Journal Article
utslib.citation.volume	253
utslib.for	0204 Condensed Matter Physics
utslib.for	0206 Quantum Physics
utslib.for	1007 Nanotechnology
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Mechanical and Mechatronic Engineering
utslib.copyright.status	closed_access	*
dc.date.updated	2022-07-31T03:32:10Z
pubs.issue	11
pubs.publication-status	Published
pubs.volume	253
utslib.citation.issue	11

Abstract:

The vacancy-rich disordered regions (DR) playing a key role in improving the thermoelectric figure-of-merit of silicon thermoelectric generators by reducing (by ∼90%) the thermal conductivity, have been probed with positrons. The DR were created by irradiating n-Cz-Si(P) material with the fast reactor neutrons. The parameter of the electron density rs′ ≈ 2.18 a.u. contacting positrons in DR has been reconstructed using the data of the angular correlation of the annihilation radiation (ACAR); the amendments to the rs′ value associated with the ion core electrons were taken into account. It is argued that the ion cores of atoms of silicon as well as the ones of the as-grown impurities (O, C) are involved in the open vacancy volume to be probed with positrons: a relaxation of the ion cores directed inward toward the vacancy volume seems to take place. These positron traps are formed beyond the vacancy-rich area of the disordered region. In the course of isochronal annealing, the traps are stable up to Tanneal. ≈ 520 °C when a recovery of ACAR parameters begins and then it continues up to ∼1050 °C. A vacancy center containing positrons in the open vacancy volume beyond the vacancy-rich area of the disordered region is shown schematically. The emission of electron–positron annihilation gamma-quanta dominates from within these positron traps. The values of both the electron–positron ion core radius (rm) and electron density (parameter rs′) suggest a relaxation directed toward inwards the open vacancy volume: the impurity atoms of oxygen and carbon are, perhaps, involved in the center.

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http://hdl.handle.net/10453/159417