Effect of Large Uniaxial Stress on the Thermoelectric Properties of Microcrystalline Silicon Thin Films

Acosta, E; Smirnov, V; Szabo, PSB; Pillajo, C; De la Cadena, E; Bennett, NS

Effect of Large Uniaxial Stress on the Thermoelectric Properties of Microcrystalline Silicon Thin Films

Acosta, E Smirnov, V Szabo, PSB Pillajo, C De la Cadena, E Bennett, NS

Permalink

Publisher:: MDPI AG
Publication Type:: Journal Article
Citation:: Electronics, 11, (24), pp. 4085-4085

Open Access

Copyright Clearance Process

Recently Added
In Progress
Open Access

This item is open access.

Adobe PDF

Download Published versionAdobe PDF (4.92 MB)

View on publisher's site

View statistics

Full metadata record

Field	Value	Language
dc.contributor.author	Acosta, E
dc.contributor.author	Smirnov, V
dc.contributor.author	Szabo, PSB
dc.contributor.author	Pillajo, C
dc.contributor.author	De la Cadena, E
dc.contributor.author	Bennett, NS
dc.date.accessioned	2022-12-10T01:37:40Z
dc.date.available	2022-12-10T01:37:40Z
dc.identifier.citation	Electronics, 11, (24), pp. 4085-4085
dc.identifier.issn	2079-9292
dc.identifier.uri	http://hdl.handle.net/10453/164276
dc.description.abstract	<jats:p>This study reports on the behaviour of the thermoelectric properties of n- and p-type hydrogenated microcrystalline silicon thin films (µc-Si: H) as a function of applied uniaxial stress up to ±1.7%. µc-Si: H thin films were deposited via plasma enhanced chemical vapour deposition and thermoelectric properties were obtained through annealing at 200 °C (350 °C) for n-(p-) type samples, before the bending experiments. Tensile (compressive) stress was effective to increase the electrical conductivity of n-(p-) type samples. Likewise, stress induced changes in the Seebeck coefficient, however, showing an improvement only in electron-doped films under compressive stress. Overall, the addition of elevated temperature to the bending experiments resulted in a decrease in the mechanical stability of the films. These trends did not produce a significant enhancement of the overall thermoelectric power factor, rather it was largely preserved in all cases.</jats:p>
dc.language	en
dc.publisher	MDPI AG
dc.relation.ispartof	Electronics
dc.relation.isbasedon	10.3390/electronics11244085
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	0906 Electrical and Electronic Engineering
dc.title	Effect of Large Uniaxial Stress on the Thermoelectric Properties of Microcrystalline Silicon Thin Films
dc.type	Journal Article
utslib.citation.volume	11
utslib.for	0906 Electrical and Electronic Engineering
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Mechanical and Mechatronic Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - CAM - Centre for Advanced Manufacturing
utslib.copyright.status	open_access	*
dc.date.updated	2022-12-10T01:37:23Z
pubs.issue	24
pubs.publication-status	Published online
pubs.volume	11
utslib.citation.issue	24

Abstract:

This study reports on the behaviour of the thermoelectric properties of n- and p-type hydrogenated microcrystalline silicon thin films (µc-Si: H) as a function of applied uniaxial stress up to ±1.7%. µc-Si: H thin films were deposited via plasma enhanced chemical vapour deposition and thermoelectric properties were obtained through annealing at 200 °C (350 °C) for n-(p-) type samples, before the bending experiments. Tensile (compressive) stress was effective to increase the electrical conductivity of n-(p-) type samples. Likewise, stress induced changes in the Seebeck coefficient, however, showing an improvement only in electron-doped films under compressive stress. Overall, the addition of elevated temperature to the bending experiments resulted in a decrease in the mechanical stability of the films. These trends did not produce a significant enhancement of the overall thermoelectric power factor, rather it was largely preserved in all cases.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/164276