A New Strategy for Selective Area Growth of Highly Uniform InGaAs/InP Multiple Quantum Well Nanowire Arrays for Optoelectronic Device Applications

Zhang, F; Zhang, X; Li, Z; Yi, R; Li, Z; Wang, N; Xu, X; Azimi, Z; Li, L; Lysevych, M; Gan, X; Lu, Y; Tan, HH; Jagadish, C; Fu, L

A New Strategy for Selective Area Growth of Highly Uniform InGaAs/InP Multiple Quantum Well Nanowire Arrays for Optoelectronic Device Applications

Zhang, F Zhang, X Li, Z Yi, R Li, Z Wang, N Xu, X

Azimi, Z Li, L Lysevych, M Gan, X Lu, Y Tan, HH Jagadish, C Fu, L

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Publisher:: WILEY-V C H VERLAG GMBH
Publication Type:: Journal Article
Citation:: Advanced Functional Materials, 2022, 32, (3)
Issue Date:: 2022-01-01

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Field	Value	Language
dc.contributor.author	Zhang, F
dc.contributor.author	Zhang, X
dc.contributor.author	Li, Z
dc.contributor.author	Yi, R
dc.contributor.author	Li, Z
dc.contributor.author	Wang, N
dc.contributor.author	Xu, X https://orcid.org/0000-0002-2598-3766
dc.contributor.author	Azimi, Z
dc.contributor.author	Li, L
dc.contributor.author	Lysevych, M
dc.contributor.author	Gan, X
dc.contributor.author	Lu, Y
dc.contributor.author	Tan, HH
dc.contributor.author	Jagadish, C
dc.contributor.author	Fu, L
dc.date.accessioned	2023-02-28T03:22:03Z
dc.date.available	2023-02-28T03:22:03Z
dc.date.issued	2022-01-01
dc.identifier.citation	Advanced Functional Materials, 2022, 32, (3)
dc.identifier.issn	1616-301X
dc.identifier.issn	1616-3028
dc.identifier.uri	http://hdl.handle.net/10453/166508
dc.description.abstract	III-V semiconductor nanowires with quantum wells (QWs) are promising for ultra-compact light sources and photodetectors from visible to infrared spectral region. However, most of the reported InGaAs/InP QW nanowires are based on the wurtzite phase and exhibit non-uniform morphology due to the complex heterostructure growth, making it challenging to incorporate multiple-QWs (MQW) for optoelectronic applications. Here, a new strategy for the growth of InGaAs/InP MQW nanowire arrays by selective area metalorganic vapor phase epitaxy is reported. It is revealed that {110} faceted InP nanowires with mixed zincblende and wurtzite phases can be achieved, forming a critical base for the subsequent growth of highly-uniform, taper-free, hexagonal-shaped MQW nanowire arrays with excellent optical properties. Room-temperature lasing at the wavelength of ≈1 µm under optical pumping is achieved with a low threshold. By incorporating dopants to form an n+-i-n+ structure, InGaAs/InP 40-QW nanowire array photodetectors are demonstrated with the broadband response (400–1600 nm) and high responsivities of 2175 A W−1 at 980 nm outperforming those of conventional planar InGaAs photodetectors. The results show that the new growth strategy is highly feasible to achieve high-quality InGaAs/InP MQW nanowires for the development of future optoelectronic devices and integrated photonic systems.
dc.language	English
dc.publisher	WILEY-V C H VERLAG GMBH
dc.relation.ispartof	Advanced Functional Materials
dc.relation.isbasedon	10.1002/adfm.202103057
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject	02 Physical Sciences, 03 Chemical Sciences, 09 Engineering
dc.subject.classification	Materials
dc.title	A New Strategy for Selective Area Growth of Highly Uniform InGaAs/InP Multiple Quantum Well Nanowire Arrays for Optoelectronic Device Applications
dc.type	Journal Article
utslib.citation.volume	32
utslib.for	02 Physical Sciences
utslib.for	03 Chemical Sciences
utslib.for	09 Engineering
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Biomedical Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	closed_access	*
dc.date.updated	2023-02-28T03:22:02Z
pubs.issue	3
pubs.publication-status	Published
pubs.volume	32
utslib.citation.issue	3

Abstract:

III-V semiconductor nanowires with quantum wells (QWs) are promising for ultra-compact light sources and photodetectors from visible to infrared spectral region. However, most of the reported InGaAs/InP QW nanowires are based on the wurtzite phase and exhibit non-uniform morphology due to the complex heterostructure growth, making it challenging to incorporate multiple-QWs (MQW) for optoelectronic applications. Here, a new strategy for the growth of InGaAs/InP MQW nanowire arrays by selective area metalorganic vapor phase epitaxy is reported. It is revealed that {110} faceted InP nanowires with mixed zincblende and wurtzite phases can be achieved, forming a critical base for the subsequent growth of highly-uniform, taper-free, hexagonal-shaped MQW nanowire arrays with excellent optical properties. Room-temperature lasing at the wavelength of ≈1 µm under optical pumping is achieved with a low threshold. By incorporating dopants to form an n+-i-n+ structure, InGaAs/InP 40-QW nanowire array photodetectors are demonstrated with the broadband response (400–1600 nm) and high responsivities of 2175 A W−1 at 980 nm outperforming those of conventional planar InGaAs photodetectors. The results show that the new growth strategy is highly feasible to achieve high-quality InGaAs/InP MQW nanowires for the development of future optoelectronic devices and integrated photonic systems.

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http://hdl.handle.net/10453/166508