Nanophotonics with Optically Active Defects in Wide-bandgap Semiconductors

Nonahal, Milad

Nanophotonics with Optically Active Defects in Wide-bandgap Semiconductors

Nonahal, Milad

Permalink

Publication Type:: Thesis
Issue Date:: 2022

Open Access

Copyright Clearance Process

Recently Added
In Progress
Open Access

This item is open access.

Adobe PDF

Download contents and abstractAdobe PDF (451.39 kB)

Adobe PDF

Download thesisAdobe PDF (9.66 MB)

View statistics

Full metadata record

Field	Value	Language
dc.contributor.author	Nonahal, Milad
dc.date.accessioned	2023-03-17T01:19:26Z
dc.date.available	2023-03-17T01:19:26Z
dc.date.issued	2022
dc.identifier.uri	http://hdl.handle.net/10453/167402
dc.description	University of Technology Sydney. Faculty of Science.	en_US.UTF-8
dc.description.abstract	Quantum nanophotonics offers significant opportunities for all the critical areas of modern quantum technologies, including quantum information processing, quantum sensing and communication. Integrated quantum photonics (IQP) refers to an emerging class of photonic devices that can generate and control coherent quantum states of light and/or matter with quite steadily increasing complexity and scale. Based on the unique properties of quantum mechanics to encode, transmit, and process information, IQP technology provides a path to revolutionize information technology in the near future. One of the fundamental aspects of chip-scale integrated devices is the manipulation of light at the nanoscale, where a quantum emitter can create a quantum state of information. Towards such applications, a robust and high-quality fabrication technique and an efficient integration of quantum emitters are required. Herein, we explored a variety of fabrication and integration techniques for the realization of hybrid and monolithic IQP components in wide bandgap semiconductors. The drawback and benefits of each fabrication and integration technique were highlighted, and the functionality of the fabrication techniques was examined through different characterization methods in four main experimental chapters as outlined below: In the first experimental chapter, a bottom-up method for monolithic device fabrication from polycrystalline diamond is developed with the realization of single-crystal diamond photonic structures. As a potential tool to achieve emission enhancement, quantum emitters were site-specifically generated into the photonic structure through the patterned growth method. To further explore light/matter interaction, in the following two chapters, we studied the hybrid integration of quantum emitters in 2D material into two different optical cavities resonance namely, whispering gallery modes (WGM) and bound state in the continuum (BIC) modes. We have demonstrated light/matter coupling in weak and strong coupling regimes leading to emission enhancement and rabi splitting, respectively. Finally, as a pathway for the monolithic integration of SPEs, we demonstrated different fabrication techniques to realize a set of common IQP components, including waveguides and cavities.	en_US.UTF-8
dc.format	Thesis (PhD)
dc.language.iso	en_US	en_US.UTF-8
dc.relation	https://opus.lib.uts.edu.au/bitstream/10453/167402/2/02whole.pdf
dc.rights	info:eu-repo/semantics/openAccess
dc.rights	The author owns the copyright in this thesis including all reproduction and reuse rights for the work. The work may not be altered without the permission of the copyright owner. Attribution is essential when quoting or paraphrasing from this thesis.
dc.rights	© 2022 Milad Nonahal
dc.rights	au.edu.uts.lib/ppc
dc.title	Nanophotonics with Optically Active Defects in Wide-bandgap Semiconductors	en_US.UTF-8
dc.type	Thesis
utslib.copyright.status	open_access	*

Abstract:

Quantum nanophotonics offers significant opportunities for all the critical areas of modern quantum technologies, including quantum information processing, quantum sensing and communication. Integrated quantum photonics (IQP) refers to an emerging class of photonic devices that can generate and control coherent quantum states of light and/or matter with quite steadily increasing complexity and scale. Based on the unique properties of quantum mechanics to encode, transmit, and process information, IQP technology provides a path to revolutionize information technology in the near future. One of the fundamental aspects of chip-scale integrated devices is the manipulation of light at the nanoscale, where a quantum emitter can create a quantum state of information. Towards such applications, a robust and high-quality fabrication technique and an efficient integration of quantum emitters are required. Herein, we explored a variety of fabrication and integration techniques for the realization of hybrid and monolithic IQP components in wide bandgap semiconductors. The drawback and benefits of each fabrication and integration technique were highlighted, and the functionality of the fabrication techniques was examined through different characterization methods in four main experimental chapters as outlined below: In the first experimental chapter, a bottom-up method for monolithic device fabrication from polycrystalline diamond is developed with the realization of single-crystal diamond photonic structures. As a potential tool to achieve emission enhancement, quantum emitters were site-specifically generated into the photonic structure through the patterned growth method. To further explore light/matter interaction, in the following two chapters, we studied the hybrid integration of quantum emitters in 2D material into two different optical cavities resonance namely, whispering gallery modes (WGM) and bound state in the continuum (BIC) modes. We have demonstrated light/matter coupling in weak and strong coupling regimes leading to emission enhancement and rabi splitting, respectively. Finally, as a pathway for the monolithic integration of SPEs, we demonstrated different fabrication techniques to realize a set of common IQP components, including waveguides and cavities.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/167402