Effect of Phononic Crystal Orientation on AlNon-Silicon Lamb Wave Micromechanical Resonators

Yang, R; Zhang, Y; Qian, J; Lee, JEY

Effect of Phononic Crystal Orientation on AlNon-Silicon Lamb Wave Micromechanical Resonators

Yang, R Zhang, Y Qian, J Lee, JEY

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Publisher:: Institute of Electrical and Electronics Engineers
Publication Type:: Journal Article
Citation:: IEEE Sensors Journal, 2022, 22, (17), pp. 16811-16819
Issue Date:: 2022-01-01

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Field	Value	Language
dc.contributor.author	Yang, R
dc.contributor.author	Zhang, Y
dc.contributor.author	Qian, J
dc.contributor.author	Lee, JEY
dc.date.accessioned	2023-07-24T00:14:51Z
dc.date.available	2023-07-24T00:14:51Z
dc.date.issued	2022-01-01
dc.identifier.citation	IEEE Sensors Journal, 2022, 22, (17), pp. 16811-16819
dc.identifier.issn	1530-437X
dc.identifier.issn	1558-1748
dc.identifier.uri	http://hdl.handle.net/10453/171625
dc.description.abstract	Phononic crystals (PnCs) have been used to boost the quality factor (Q) of AlN-on-Silicon Lamb Wave Resonators (LWRs). But most reports on applying PnCs to resonators have focused on the common <110> orientation within (100) silicon. Little is known on the applicability of other crystal orientations. In this work, we explore the effect of orientation on the acoustic band gap (ABG) of two PnC designs and their effect on boosting Q: a disk PnC and a ring PnC. From Finite Element simulation, we show that the disk PnC’s ABG is insensitive to orientation while adding a hole into the disk to form a ring changes its ABG to be much more sensitive to orientation. Leveraging the PnCs as anchoring boundary of LWRs, the disk PnC exhibits comparable effectiveness to boost Q > 11,000 in the <110> and <100> directions while the ring PnC is effective only in the <110> direction. We further corroborate these trends by incorporating the disk PnC into delay lines in either crystal axis.
dc.language	en
dc.publisher	Institute of Electrical and Electronics Engineers
dc.relation.ispartof	IEEE Sensors Journal
dc.relation.isbasedon	10.1109/JSEN.2022.3192088
dc.rights	info:eu-repo/semantics/embargoedAccess
dc.subject	0205 Optical Physics, 0906 Electrical and Electronic Engineering, 0913 Mechanical Engineering
dc.subject.classification	Analytical Chemistry
dc.subject.classification	40 Engineering
dc.title	Effect of Phononic Crystal Orientation on AlNon-Silicon Lamb Wave Micromechanical Resonators
dc.type	Journal Article
utslib.citation.volume	22
utslib.for	0205 Optical Physics
utslib.for	0906 Electrical and Electronic Engineering
utslib.for	0913 Mechanical Engineering
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	open_access	*
pubs.consider-herdc	false
utslib.copyright.embargo	2024-09-30T00:00:00+1000Z
dc.date.updated	2023-07-24T00:14:46Z
pubs.issue	17
pubs.publication-status	Published
pubs.volume	22
utslib.citation.issue	17

Abstract:

Phononic crystals (PnCs) have been used to boost the quality factor (Q) of AlN-on-Silicon Lamb Wave Resonators (LWRs). But most reports on applying PnCs to resonators have focused on the common <110> orientation within (100) silicon. Little is known on the applicability of other crystal orientations. In this work, we explore the effect of orientation on the acoustic band gap (ABG) of two PnC designs and their effect on boosting Q: a disk PnC and a ring PnC. From Finite Element simulation, we show that the disk PnC’s ABG is insensitive to orientation while adding a hole into the disk to form a ring changes its ABG to be much more sensitive to orientation. Leveraging the PnCs as anchoring boundary of LWRs, the disk PnC exhibits comparable effectiveness to boost Q > 11,000 in the <110> and <100> directions while the ring PnC is effective only in the <110> direction. We further corroborate these trends by incorporating the disk PnC into delay lines in either crystal axis.

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http://hdl.handle.net/10453/171625