Controlled Growth and Quantum Emitter Integration in Hexagonal Boron Nitride

Ritika

Controlled Growth and Quantum Emitter Integration in Hexagonal Boron Nitride

Ritika

Permalink

Publication Type:: Thesis
Issue Date:: 2025

Open Access

Copyright Clearance Process

Recently Added
In Progress
Open Access

This item is open access.

Adobe PDF

Download thesisAdobe PDF (5.61 MB)

View statistics

Full metadata record

Field	Value	Language
dc.contributor.author	Ritika
dc.date.accessioned	2026-08-10T04:03:28Z
dc.date.available	2026-08-10T04:03:28Z
dc.date.issued	2025
dc.identifier.uri	http://hdl.handle.net/10453/195961
dc.description	University of Technology Sydney. Faculty of Science.	en_US.UTF-8
dc.description.abstract	Quantum technologies offer transformative potential for computing, communication, and sensing, but practical implementation requires reliable single-photon sources. Defects in solid-state materials are among the most promising candidates for such sources. Two-dimensional materials, particularly hexagonal boron nitride, are highly favourable due to their ease of integration with photonic devices, controllable defect creation, high emission efficiency, and spin-active properties. While diamond and silicon carbide exhibit bright and stable emission, integrating them with nanoscale devices remains challenging. Hexagonal boron nitride, being atomically thin and free of dangling bonds, can host bright single-photon emitters and be incorporated into nanophotonic structures and heterostructures. In this thesis, scalable methods to create and control quantum emitters in hexagonal boron nitride are developed. Low-pressure chemical vapor deposition growth was optimized for uniform and crystalline films. Homoepitaxial growth was investigated to study the influence of lattice coherence on defect formation and emission quality. Structured defect engineering enabled the activation of bright, stable emitters. Comprehensive optical characterization was performed, and plasmonic coupling of boron vacancy spin defects was demonstrated to enhance light-matter interaction and advance integration with quantum photonic devices.	en_US.UTF-8
dc.format	Thesis (PhD)
dc.language.iso	en_US	en_US.UTF-8
dc.relation	https://opus.lib.uts.edu.au/bitstream/10453/195961/1/thesis.pdf
dc.rights	info:eu-repo/semantics/openAccess
dc.rights	The author owns the copyright in this thesis including all reproduction and reuse rights for the work. The work may not be altered without the permission of the copyright owner. Attribution is essential when quoting or paraphrasing from this thesis.
dc.rights	© 2025 Ritika
dc.rights	au.edu.uts.lib/cph
dc.title	Controlled Growth and Quantum Emitter Integration in Hexagonal Boron Nitride	en_US.UTF-8
dc.type	Thesis
utslib.copyright.status	open_access	*

Abstract:

Quantum technologies offer transformative potential for computing, communication, and sensing, but practical implementation requires reliable single-photon sources. Defects in solid-state materials are among the most promising candidates for such sources. Two-dimensional materials, particularly hexagonal boron nitride, are highly favourable due to their ease of integration with photonic devices, controllable defect creation, high emission efficiency, and spin-active properties. While diamond and silicon carbide exhibit bright and stable emission, integrating them with nanoscale devices remains challenging. Hexagonal boron nitride, being atomically thin and free of dangling bonds, can host bright single-photon emitters and be incorporated into nanophotonic structures and heterostructures. In this thesis, scalable methods to create and control quantum emitters in hexagonal boron nitride are developed. Low-pressure chemical vapor deposition growth was optimized for uniform and crystalline films. Homoepitaxial growth was investigated to study the influence of lattice coherence on defect formation and emission quality. Structured defect engineering enabled the activation of bright, stable emitters. Comprehensive optical characterization was performed, and plasmonic coupling of boron vacancy spin defects was demonstrated to enhance light-matter interaction and advance integration with quantum photonic devices.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/195961