Electrical Generation, Excitation and Control of Hexagonal Boron Nitride Quantum Emitters

Zhigulin, Ivan

Electrical Generation, Excitation and Control of Hexagonal Boron Nitride Quantum Emitters

Zhigulin, Ivan

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Publication Type:: Thesis
Issue Date:: 2026

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Field	Value	Language
dc.contributor.author	Zhigulin, Ivan
dc.date.accessioned	2026-10-26T02:12:55Z
dc.date.available	2026-10-26T02:12:55Z
dc.date.issued	2026
dc.identifier.uri	http://hdl.handle.net/10453/197251
dc.description	University of Technology Sydney. Faculty of Science.	en_US.UTF-8
dc.description.abstract	Global technological leadership is increasingly determined by the ability to develop advanced information processing and communication. Classical semiconductor technologies, which have underpinned modern electronics for decades, are approaching fundamental scaling limits and are subject to growing geopolitical constraints on fabrication capabilities. In parallel, quantum technologies have emerged as a disruptive alternative, offering to surpass classical systems in computation and secure communication, while also adding atomic-scale sensing capability. Realising these technologies in practice requires scalable, robust, and miniaturised hardware platforms designed to operate fully on-chip. This thesis explores key building blocks necessary for quantum technologies. Here, novel van der Waals heterostructure devices are engineered for generation, excitation, and control of quantum emitters in hexagonal boron nitride (hBN). Electrical control of emitter luminescence is shown via the Stark effect, providing insight into defect symmetry and quantifying controllable spectral tuning. Furthermore, electroluminescence from hBN quantum emitters is achieved operating in a quantum tunnelling regime, bypassing conventional p-i-n junction architectures. Lastly, electrical generation of emitters is demonstrated using locally applied high electric fields, enabling site-specific generation directly within device structures. Together, these results establish experimentally viable routes towards electrically generated, controlled, and driven quantum light sources and position hBN as a promising platform for scalable quantum photonic technologies.	en_US.UTF-8
dc.format	Thesis (PhD)
dc.language.iso	en_US	en_US.UTF-8
dc.relation	https://opus.lib.uts.edu.au/bitstream/10453/197251/1/thesis.pdf
dc.rights	info:eu-repo/semantics/openAccess
dc.rights	The author owns the copyright in this thesis including all reproduction and reuse rights for the work. The work may not be altered without the permission of the copyright owner. Attribution is essential when quoting or paraphrasing from this thesis.
dc.rights	© 2026 Ivan Zhigulin
dc.rights	au.edu.uts.lib/cph
dc.title	Electrical Generation, Excitation and Control of Hexagonal Boron Nitride Quantum Emitters	en_US.UTF-8
dc.type	Thesis
utslib.copyright.status	open_access	*

Abstract:

Global technological leadership is increasingly determined by the ability to develop advanced information processing and communication. Classical semiconductor technologies, which have underpinned modern electronics for decades, are approaching fundamental scaling limits and are subject to growing geopolitical constraints on fabrication capabilities. In parallel, quantum technologies have emerged as a disruptive alternative, offering to surpass classical systems in computation and secure communication, while also adding atomic-scale sensing capability. Realising these technologies in practice requires scalable, robust, and miniaturised hardware platforms designed to operate fully on-chip. This thesis explores key building blocks necessary for quantum technologies. Here, novel van der Waals heterostructure devices are engineered for generation, excitation, and control of quantum emitters in hexagonal boron nitride (hBN). Electrical control of emitter luminescence is shown via the Stark effect, providing insight into defect symmetry and quantifying controllable spectral tuning. Furthermore, electroluminescence from hBN quantum emitters is achieved operating in a quantum tunnelling regime, bypassing conventional p-i-n junction architectures. Lastly, electrical generation of emitters is demonstrated using locally applied high electric fields, enabling site-specific generation directly within device structures. Together, these results establish experimentally viable routes towards electrically generated, controlled, and driven quantum light sources and position hBN as a promising platform for scalable quantum photonic technologies.

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http://hdl.handle.net/10453/197251