Investigation into the effects of electron-beam irradiation on III-nitride based LED devices

Lockrey, MN

Investigation into the effects of electron-beam irradiation on III-nitride based LED devices

Lockrey, MN

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Publication Type:: Thesis
Issue Date:: 2015

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Field	Value	Language
dc.contributor.author	Lockrey, MN
dc.date.accessioned	2015-11-30T23:19:15Z
dc.date.available	2015-11-30T23:19:15Z
dc.date.issued	2015
dc.identifier.uri	http://hdl.handle.net/10453/39190
dc.description	University of Technology Sydney. Faculty of Science.	en_AU
dc.description.abstract	The effects of low-energy electron irradiation (LEEBI) on the emission from InGaN/GaN multi quantum wells (MQW) LED devices have been systematically investigated using temperature-, power- and depth-resolved cathodoluminescence (CL) studies. In this work a dedicated CL system was developed to facilitate CL spectral spatial imaging as well as CL spectral time-resolved imaging over a broad temperature range from 10K to 750 K. LEEBI of InGaN/GaN MQWs has been previously described in the literature reporting effects such as formation of a new blue-shifted emission band from the as-fabricated MQW emission as well as both enhancement and quenching of the MQW emission. However, no clear explanation of the LEEBI induced modification of on the optical emission of MQW LED structures have been given up to now. It has been established in this work that LEEBI of In0.35Ga0.65N/GaN LED structures with an as-fabricated optical emission at 2.62 eVat 300K can produce an enhancement of the electroluminescence by over 2x. It was determined that this improvement is stable up to temperatures of 150 °C. Longer LEEBI irradiation quenched the 2.62 eVpeak and produce a different emission peak at 2.82 eV. Depth-resolved CL revealed that this new emission peak originates from the same depth as the MQW structure. These studies also confirmed that the LEEBI modification mechanism involves the electro-migration of H released from Mg-H complexes in the p-type capping layer that first passivates non-radiative recombination centres in the MQW increasing its light output and subsequently reacts with In within the MQW decreasing the localisation energy.	en_AU
dc.format	Thesis (PhD)
dc.language.iso	en_AU	en_AU
dc.relation	https://opus.lib.uts.edu.au/bitstream/10453/39190/2/02whole.pdf
dc.rights	au.edu.uts.lib/ppc
dc.rights	The author owns the copyright in this thesis including all reproduction and reuse rights for the work. The work may not be altered without the permission of the copyright owner. Attribution is essential when quoting or paraphrasing from this thesis.
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Low-energy electron irradiation (LEEBI).	en
dc.subject	III-nitride based LED devices.	en
dc.subject	Multi quantum wells (MQW) LED devices.	en
dc.subject	Cathodoluminescence (CL) studies.	en
dc.subject	MQW LED structures.	en
dc.title	Investigation into the effects of electron-beam irradiation on III-nitride based LED devices	en_AU
dc.type	Thesis	en_AU
utslib.copyright.status	open_access

Abstract:

The effects of low-energy electron irradiation (LEEBI) on the emission from InGaN/GaN multi quantum wells (MQW) LED devices have been systematically investigated using temperature-, power- and depth-resolved cathodoluminescence (CL) studies. In this work a dedicated CL system was developed to facilitate CL spectral spatial imaging as well as CL spectral time-resolved imaging over a broad temperature range from 10K to 750 K. LEEBI of InGaN/GaN MQWs has been previously described in the literature reporting effects such as formation of a new blue-shifted emission band from the as-fabricated MQW emission as well as both enhancement and quenching of the MQW emission. However, no clear explanation of the LEEBI induced modification of on the optical emission of MQW LED structures have been given up to now. It has been established in this work that LEEBI of In0.35Ga0.65N/GaN LED structures with an as-fabricated optical emission at 2.62 eVat 300K can produce an enhancement of the electroluminescence by over 2x. It was determined that this improvement is stable up to temperatures of 150 °C. Longer LEEBI irradiation quenched the 2.62 eVpeak and produce a different emission peak at 2.82 eV. Depth-resolved CL revealed that this new emission peak originates from the same depth as the MQW structure. These studies also confirmed that the LEEBI modification mechanism involves the electro-migration of H released from Mg-H complexes in the p-type capping layer that first passivates non-radiative recombination centres in the MQW increasing its light output and subsequently reacts with In within the MQW decreasing the localisation energy.

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http://hdl.handle.net/10453/39190