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Browsing byAuthorWong-Leung, J
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Showing results 5 to 11 of 11
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Issue Date
Title
Author(s)
2020-09-01
Highly regular rosette-shaped cathodoluminescence in GaN self-assembled nanodisks and nanorods
Zhao, B
;
Lockrey, MN
;
Wang, N
;
Caroff, P
;
Yuan, X
;
Li, L
;
Wong-Leung, J
;
Tan, HH
;
Jagadish, C
2002-01-21
Indentation-induced damage in GaN epilayers
Bradby, JE
;
Kucheyev, SO
;
Williams, JS
;
Wong-Leung, J
;
Swain, MV
;
Munroe, P
;
Li, G
;
Phillips, MR
2014-02-10
InP-based radial heterostructures grown on [100] nanowires
Fonseka, HA
;
Caroff, P
;
Guo, Y
;
Wang, F
;
Wong-Leung, J
;
Tan, HH
;
Jagadish, C
2019-06-12
Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes
Yang, I
;
Li, Z
;
Wong-Leung, J
;
Zhu, Y
;
Gagrani, N
;
Li, L
;
Lockrey, MN
;
Nguyen, H
;
Lu, Y
;
Tan, HH
;
Jagadish, C
;
Fu, L
2018-01-01
Radial Growth Evolution of InGaAs/InP Multi-Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy
Yang, I
;
Zhang, X
;
Zheng, C
;
Gao, Q
;
Li, Z
;
Li, L
;
Lockrey, MN
;
Nguyen, H
;
Caroff, P
;
Etheridge, J
;
Tan, HH
;
Jagadish, C
;
Wong-Leung, J
;
Fu, L
2014-09-10
Selective-area epitaxy of pure wurtzite InP nanowires: High quantum efficiency and room-temperature lasing
Gao, Q
;
Saxena, D
;
Wang, F
;
Fu, L
;
Mokkapati, S
;
Guo, Y
;
Li, L
;
Wong-Leung, J
;
Caroff, P
;
Tan, HH
;
Jagadish, C
2008-04-21
Tuning the bandgap of InAs quantum dots by selective-area MOCVD
Mokkapati, S
;
Wong-Leung, J
;
Tan, HH
;
Jagadish, C
;
McBean, KE
;
Phillips, MR