Tuning the bandgap of InAs quantum dots by selective-area MOCVD

IOP Publishing Ltd
Publication Type:
Journal Article
Journal Of Physics D-Applied Physics, 2008, 41 (8), pp. 0 - 0
Issue Date:
Full metadata record
Files in This Item:
Filename Description Size
Thumbnail2008000234OK.pdf555.25 kB
Adobe PDF
In-plane bandgap energy control of InAs quantum dots (QDs) grown on GaAs substrates is demonstrated using selective-area epitaxy. Transmission electron microscopy and cathodoluminescence are used for characterization of the selectively grown dots. A sing
Please use this identifier to cite or link to this item: