Browsing byAuthorKucheyev, SO
Showing results 1 to 8 of 8
Issue Date | Title | Author(s) |
2001-01-01 | Cathodoluminescence depth profiling of ion-implanted GaN | Kucheyev, SO; Toth, M; Phillips, MR; Williams, JS; Jagadish, C; Li, G |
2003-04-01 | Cathodoluminescence efficiency dependence on excitation density in n-type gallium nitride | Phillips, MR; Telg, H; Kucheyev, SO; Gelhausen, O; Toth, M |
2002-05-01 | Chemical origin of the yellow luminescence in GaN | Kucheyev, SO; Toth, M; Phillips, MR; Williams, JS; Jagadish, C; Li, G |
2002-06-17 | Contact-induced defect propagation in ZnO | Bradby, JE; Kucheyev, SO; Williams, JS; Jagadish, C; Swain, MV; Munroe, P; Phillips, MR |
2001-10-01 | Effects of excitation density on cathodoluminescence from GaN | Kucheyev, SO; Toth, M; Phillips, MR; Williams, JS; Jagadish, C |
2002-01-21 | Indentation-induced damage in GaN epilayers | Bradby, JE; Kucheyev, SO; Williams, JS; Wong-Leung, J; Swain, MV; Munroe, P; Li, G; Phillips, MR |
2007-01-16 | Structure of low-density nanoporous dielectrics revealed by low-vacuum electron microscopy and small-angle X-ray scattering | Kucheyev, SO; Toth, M; Baumann, TF; Hamza, AV; Ilavsky, J; Knowles, WR; Saw, CK; Thiel, BL; Tileli, V; Van Buuren, T; Wang, YM; Willey, TM |
2002-03-15 | X-ray spectrometry investigation of electrical isolation in GaN | Kucheyev, SO; Toth, M; Phillips, MR; Williams, JS; Jagadish, C; Li, G |