Chemical origin of the yellow luminescence in GaN

American Institute of Physics
Publication Type:
Journal Article
Journal of Applied Physics, 2002, 91 (9), pp. 5867 - 5874
Issue Date:
Full metadata record
Files in This Item:
Filename Description SizeFormat
2004003010.pdf327.62 kBAdobe PDF
The influence of ion-beam-produced lattice defects as well as H, B, C, N, O, and Si, introduced by ion implantation, on the luminescence properties of wurtzite GaN is studied by cathodoluminescence spectroscopy. Results indicate that intrinsic lattice defects produced by ion bombardment mainly act as nonradiative recombination centers and do not give rise to the yellow luminescence (YL) of GaN. Experimental data unequivocally shows that C is involved in the defect-impurity complex responsible for YL. In addition, C-related complexes appear to act as efficient nonradiative recombination centers. Implantation of H produces a broad luminescent peak which is slightly blueshifted with respect to the C-related YL band in the case of high excitation densities. The position of this H-related YL peak exhibits a blueshift with increasing excitation density. Based on this experimental data and results reported previously, the chemical origin of the YL band is discussed
Please use this identifier to cite or link to this item: