Contact-induced defect propagation in ZnO

Publication Type:
Journal Article
Applied Physics Letters, 2002, 80 (24), pp. 4537 - 4539
Issue Date:
Filename Description Size
Thumbnail2004002966.pdf316.61 kB
Adobe PDF
Full metadata record
Contact-induced damage has been studied in single-crystal (wurtzite) ZnO by cross-sectional transmission electron microscopy (XTEM) and scanning cathodoluminescence (CL) monochromatic imaging. XTEM reveals that the prime deformation mechanism in ZnO is the nucleation of slip on both the basal and pyramidal planes. Some indication of dislocation pinning was observed on the basal slip planes. No evidence of either a phase transformation or cracking was observed by XTEM in samples loaded up to 50 mN with an ∼4.2 μm radius spherical indenter. CL imaging reveals a quenching of near-gap emission by deformation-produced defects.Both XTEM and CL show that this comparatively soft material exhibits extensive deformation damage and that defects can propagate well beyond the deformed volume under contact. Results of this study have significant implications for the extent of contact-induced damage during fabrication of ZnO-based (opto)electronic devices. © 2002 American Institute of Physics.
Please use this identifier to cite or link to this item: