Single nanowire green InGaN/GaN light emitting diodes

Zhang, G; Li, Z; Yuan, X; Wang, F; Fu, L; Zhuang, Z; Ren, FF; Liu, B; Zhang, R; Tan, HH; Jagadish, C

Single nanowire green InGaN/GaN light emitting diodes

Zhang, G Li, Z Yuan, X Wang, F

Fu, L Zhuang, Z Ren, FF Liu, B Zhang, R Tan, HH Jagadish, C

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Publication Type:: Journal Article
Citation:: Nanotechnology, 2016, 27 (43)
Issue Date:: 2016-09-23

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Field	Value	Language
dc.contributor.author	Zhang, G	en_US
dc.contributor.author	Li, Z	en_US
dc.contributor.author	Yuan, X	en_US
dc.contributor.author	Wang, F https://orcid.org/0000-0001-7403-3305	en_US
dc.contributor.author	Fu, L	en_US
dc.contributor.author	Zhuang, Z	en_US
dc.contributor.author	Ren, FF	en_US
dc.contributor.author	Liu, B	en_US
dc.contributor.author	Zhang, R	en_US
dc.contributor.author	Tan, HH	en_US
dc.contributor.author	Jagadish, C	en_US
dc.date.issued	2016-09-23	en_US
dc.identifier.citation	Nanotechnology, 2016, 27 (43)	en_US
dc.identifier.issn	0957-4484	en_US
dc.identifier.uri	http://hdl.handle.net/10453/102076
dc.description.abstract	© 2016 IOP Publishing Ltd. Single nanowire (NW) green InGaN/GaN light-emitting diodes (LEDs) were fabricated by top-down etching technology. The electroluminescence (EL) peak wavelength remains approximately constant with an increasing injection current in contrast to a standard planar LED, which suggests that the quantum-confined Stark effect is significantly reduced in the single NW device. The strain relaxation mechanism is studied in the single NW LED using Raman scattering analysis. As compared to its planar counterpart, the EL peak of the NW LED shows a redshift, due to electric field redistribution as a result of changes in the cavity mode pattern after metallization. Our method has important implication for single NW optoelectronic device applications.	en_US
dc.relation.ispartof	Nanotechnology	en_US
dc.relation.isbasedon	10.1088/0957-4484/27/43/435205	en_US
dc.subject.classification	Nanoscience & Nanotechnology	en_US
dc.title	Single nanowire green InGaN/GaN light emitting diodes	en_US
dc.type	Journal Article
utslib.citation.volume	43	en_US
utslib.citation.volume	27	en_US
utslib.for	0912 Materials Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	closed_access
pubs.issue	43	en_US
pubs.publication-status	Published	en_US
pubs.volume	27	en_US

Abstract:

© 2016 IOP Publishing Ltd. Single nanowire (NW) green InGaN/GaN light-emitting diodes (LEDs) were fabricated by top-down etching technology. The electroluminescence (EL) peak wavelength remains approximately constant with an increasing injection current in contrast to a standard planar LED, which suggests that the quantum-confined Stark effect is significantly reduced in the single NW device. The strain relaxation mechanism is studied in the single NW LED using Raman scattering analysis. As compared to its planar counterpart, the EL peak of the NW LED shows a redshift, due to electric field redistribution as a result of changes in the cavity mode pattern after metallization. Our method has important implication for single NW optoelectronic device applications.

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http://hdl.handle.net/10453/102076