Improving superconducting properties of MgB<inf>2</inf>graphene doping

Publication Type:
Journal Article
Citation:
IEEE Transactions on Applied Superconductivity, 2011, 21 (3 PART 3), pp. 2686 - 2689
Issue Date:
2011-06-01
Metrics:
Full metadata record
Files in This Item:
Filename Description Size
grap.pdfPublished Version423.93 kB
Adobe PDF
we report the synthesis and characterization of MgB2made from nano-boron and doped with graphene in the following mole percentages, X = 0, 3.0 and 12.0. The effect of graphene doping on the normal state resistivity (ρ), superconducting transition temperature Tc, irreversibility and upper critical fields (Hirrand Hc2), and critical current density Jc, as well as the pinning force (Fp) were evaluated. We found that the graphene doping has a positive impact on the above mentioned properties. In the case of the optimally doped (X = 3.0%) sample, the critical current density at 5 K corresponds to 1.4×105A/cm2for 2 T field, whereas the undoped sample showed 9.6×104A/cm2for the same field, i.e., 1.5 times improvement. Furthermore, the optimally doped sample showed a Jcof nearly 1×104A/cm2at 5K, 8 T, which is a significantly high value. The upper critical field has been enhanced to 13 T at 20Kfor the optimal doping level. The flux pinning behavior has been evaluated from the curve of flux pinning force against applied magnetic field, and it reveals that the maximum pinning has been improved by nearly 1.2 times at 20 K, due to the graphene doping. © 2010 IEEE.
Please use this identifier to cite or link to this item: