The effects of graphene doping on the in-field J<inf>c</inf>of MgB<inf>2</inf>wires

Publication Type:
Journal Article
Citation:
Journal of Nanoscience and Nanotechnology, 2012, 12 (2), pp. 1402 - 1405
Issue Date:
2012-06-05
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The field and temperature dependence of the critical current density Jctwere measured for both un-doped and graphene doped MgB2/Fe wires manufactured by 99.999% Crystalline Boron and 10% excess Magnesium (99%, 325 mesh). At 4.2 K and 10 T, Jctwas estimated to be for the wire sintered at 800 °C for 30 minutes, the doped sample is almost improved as one order, compared with the best un-doped sample. At the same time, the temperature dependence of the upper critical field (Hc2and the irreversibility field (Hirr for the samples will also be included from the resistance (R)-temperature (T ). A significant increase in the upper critical field is the main cause of the enhancement of the critical current density, Jct, in the high field region. The calculated active crosssectional area fraction (AF represents the connectivity factor between adjacent grains. This value is decreased with wire samples, which is why the improvement of transport Jctis lower than the improvement of magnetic Jcmin diffusion bulk sample. Copyright © 2012 American Scientific Publishers.
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