The effects of graphene doping on the in-field J <inf>c</inf> of MgB <inf>2</inf> wires
- Publication Type:
- Journal Article
- Citation:
- Journal of Nanoscience and Nanotechnology, 2012, 12 (2), pp. 1402 - 1405
- Issue Date:
- 2012-06-05
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| JNN_ICEM2012.pdf | Submitted Version | 685.81 kB |
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The field and temperature dependence of the critical current density J ct were measured for both un-doped and graphene doped MgB 2/Fe wires manufactured by 99.999% Crystalline Boron and 10% excess Magnesium (99%, 325 mesh). At 4.2 K and 10 T, J ct was estimated to be for the wire sintered at 800 °C for 30 minutes, the doped sample is almost improved as one order, compared with the best un-doped sample. At the same time, the temperature dependence of the upper critical field (H c2 and the irreversibility field (Hirr for the samples will also be included from the resistance (R)-temperature (T ). A significant increase in the upper critical field is the main cause of the enhancement of the critical current density, J ct , in the high field region. The calculated active crosssectional area fraction (AF represents the connectivity factor between adjacent grains. This value is decreased with wire samples, which is why the improvement of transport J ct is lower than the improvement of magnetic J cm in diffusion bulk sample. Copyright © 2012 American Scientific Publishers.
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