Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride
- Publication Type:
- Journal Article
- Advanced Materials, 2017, 29 (12)
- Issue Date:
Files in This Item:
|\\utsfs.adsroot.uts.edu.au\homes\staff\108848\Desktop\Berhane_et_al-2017-Advanced_Materials.pdf||Published Version||1.88 MB|
Copyright Clearance Process
- Recently Added
- In Progress
- Closed Access
This item is closed access and not available.
Researchers report room-temperature (RT), bright, stable single-photon emitters (SPEs) in GaN films that do not require any post-growth sample treatments. The emitters are defects that are optically active in the visible/near-infrared spectral range, and the zero-phonon lines (ZPL) span a wide range of wavelengths. They are found in five GaN wafers that have different doping types and levels, and are grown on various substrates using metal organic chemical vapor deposition various substrates using metal organic chemical vapor deposition (MOCVD), the most common commercially viable technique for the growth of device-grade GaN.
Please use this identifier to cite or link to this item: