Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride
Berhane, AM
Jeong, KY
Bodrog, Z
Fiedler, S
Schröder, T
Triviño, NV
Palacios, T
Gali, A
Toth, M
Englund, D
Aharonovich, I
- Publication Type:
- Journal Article
- Citation:
- Advanced Materials, 2017, 29 (12)
- Issue Date:
- 2017-03-28
Closed Access
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\\utsfs.adsroot.uts.edu.au\homes\staff\108848\Desktop\Berhane_et_al-2017-Advanced_Materials.pdf | Published Version | 1.88 MB |
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Full metadata record
Field | Value | Language |
---|---|---|
dc.contributor.author |
Berhane, AM |
en_US |
dc.contributor.author | Jeong, KY | en_US |
dc.contributor.author | Bodrog, Z | en_US |
dc.contributor.author | Fiedler, S | en_US |
dc.contributor.author | Schröder, T | en_US |
dc.contributor.author | Triviño, NV | en_US |
dc.contributor.author | Palacios, T | en_US |
dc.contributor.author | Gali, A | en_US |
dc.contributor.author |
Toth, M |
en_US |
dc.contributor.author | Englund, D | en_US |
dc.contributor.author |
Aharonovich, I |
en_US |
dc.date.issued | 2017-03-28 | en_US |
dc.identifier.citation | Advanced Materials, 2017, 29 (12) | en_US |
dc.identifier.issn | 0935-9648 | en_US |
dc.identifier.uri | http://hdl.handle.net/10453/115701 | |
dc.description.abstract | Researchers report room-temperature (RT), bright, stable single-photon emitters (SPEs) in GaN films that do not require any post-growth sample treatments. The emitters are defects that are optically active in the visible/near-infrared spectral range, and the zero-phonon lines (ZPL) span a wide range of wavelengths. They are found in five GaN wafers that have different doping types and levels, and are grown on various substrates using metal organic chemical vapor deposition various substrates using metal organic chemical vapor deposition (MOCVD), the most common commercially viable technique for the growth of device-grade GaN. | en_US |
dc.relation | http://purl.org/au-research/grants/arc/DP140102721 | |
dc.relation | http://purl.org/au-research/grants/arc/IH150100028 | |
dc.relation | http://purl.org/au-research/grants/arc/DE130100592 | |
dc.relation.ispartof | Advanced Materials | en_US |
dc.relation.isbasedon | 10.1002/adma.201605092 | en_US |
dc.subject.classification | Nanoscience & Nanotechnology | en_US |
dc.title | Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride | en_US |
dc.type | Journal Article | |
utslib.citation.volume | 12 | en_US |
utslib.citation.volume | 29 | en_US |
utslib.for | 030303 Optical Properties of Materials | en_US |
utslib.for | 0205 Optical Physics | en_US |
utslib.for | 0912 Materials Engineering | en_US |
utslib.for | 02 Physical Sciences | en_US |
utslib.for | 03 Chemical Sciences | en_US |
utslib.for | 09 Engineering | en_US |
pubs.embargo.period | Not known | en_US |
pubs.organisational-group | /University of Technology Sydney | |
pubs.organisational-group | /University of Technology Sydney/Faculty of Science | |
pubs.organisational-group | /University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences | |
pubs.organisational-group | /University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices | |
pubs.organisational-group | /University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency | |
pubs.organisational-group | /University of Technology Sydney/Students | |
utslib.copyright.status | closed_access | |
pubs.issue | 12 | en_US |
pubs.publication-status | Published | en_US |
pubs.volume | 29 | en_US |
Abstract:
Researchers report room-temperature (RT), bright, stable single-photon emitters (SPEs) in GaN films that do not require any post-growth sample treatments. The emitters are defects that are optically active in the visible/near-infrared spectral range, and the zero-phonon lines (ZPL) span a wide range of wavelengths. They are found in five GaN wafers that have different doping types and levels, and are grown on various substrates using metal organic chemical vapor deposition various substrates using metal organic chemical vapor deposition (MOCVD), the most common commercially viable technique for the growth of device-grade GaN.
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