Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride

Publication Type:
Journal Article
Citation:
Advanced Materials, 2017, 29 (12)
Issue Date:
2017-03-28
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Researchers report room-temperature (RT), bright, stable single-photon emitters (SPEs) in GaN films that do not require any post-growth sample treatments. The emitters are defects that are optically active in the visible/near-infrared spectral range, and the zero-phonon lines (ZPL) span a wide range of wavelengths. They are found in five GaN wafers that have different doping types and levels, and are grown on various substrates using metal organic chemical vapor deposition various substrates using metal organic chemical vapor deposition (MOCVD), the most common commercially viable technique for the growth of device-grade GaN.
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