Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride

Berhane, AM; Jeong, KY; Bodrog, Z; Fiedler, S; Schröder, T; Triviño, NV; Palacios, T; Gali, A; Toth, M; Englund, D; Aharonovich, I

Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride

Berhane, AM

Jeong, KY Bodrog, Z Fiedler, S Schröder, T Triviño, NV Palacios, T Gali, A Toth, M

Englund, D Aharonovich, I

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Publication Type:: Journal Article
Citation:: Advanced Materials, 2017, 29 (12)
Issue Date:: 2017-03-28

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Field	Value	Language
dc.contributor.author	Berhane, AM https://orcid.org/0000-0002-8983-6781	en_US
dc.contributor.author	Jeong, KY	en_US
dc.contributor.author	Bodrog, Z	en_US
dc.contributor.author	Fiedler, S	en_US
dc.contributor.author	Schröder, T	en_US
dc.contributor.author	Triviño, NV	en_US
dc.contributor.author	Palacios, T	en_US
dc.contributor.author	Gali, A	en_US
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899	en_US
dc.contributor.author	Englund, D	en_US
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935	en_US
dc.date.issued	2017-03-28	en_US
dc.identifier.citation	Advanced Materials, 2017, 29 (12)	en_US
dc.identifier.issn	0935-9648	en_US
dc.identifier.uri	http://hdl.handle.net/10453/115701
dc.description.abstract	Researchers report room-temperature (RT), bright, stable single-photon emitters (SPEs) in GaN films that do not require any post-growth sample treatments. The emitters are defects that are optically active in the visible/near-infrared spectral range, and the zero-phonon lines (ZPL) span a wide range of wavelengths. They are found in five GaN wafers that have different doping types and levels, and are grown on various substrates using metal organic chemical vapor deposition various substrates using metal organic chemical vapor deposition (MOCVD), the most common commercially viable technique for the growth of device-grade GaN.	en_US
dc.relation	http://purl.org/au-research/grants/arc/DP140102721
dc.relation	http://purl.org/au-research/grants/arc/IH150100028
dc.relation	http://purl.org/au-research/grants/arc/DE130100592
dc.relation.ispartof	Advanced Materials	en_US
dc.relation.isbasedon	10.1002/adma.201605092	en_US
dc.subject.classification	Nanoscience & Nanotechnology	en_US
dc.title	Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride	en_US
dc.type	Journal Article
utslib.citation.volume	12	en_US
utslib.citation.volume	29	en_US
utslib.for	030303 Optical Properties of Materials	en_US
utslib.for	0205 Optical Physics	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	03 Chemical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
pubs.organisational-group	/University of Technology Sydney/Students
utslib.copyright.status	closed_access
pubs.issue	12	en_US
pubs.publication-status	Published	en_US
pubs.volume	29	en_US

Abstract:

Researchers report room-temperature (RT), bright, stable single-photon emitters (SPEs) in GaN films that do not require any post-growth sample treatments. The emitters are defects that are optically active in the visible/near-infrared spectral range, and the zero-phonon lines (ZPL) span a wide range of wavelengths. They are found in five GaN wafers that have different doping types and levels, and are grown on various substrates using metal organic chemical vapor deposition various substrates using metal organic chemical vapor deposition (MOCVD), the most common commercially viable technique for the growth of device-grade GaN.

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http://hdl.handle.net/10453/115701