Spontaneous growth of gallium-filled microcapillaries on ion-bombarded GaN

Botman, A; Bahm, A; Randolph, S; Straw, M; Toth, M

Spontaneous growth of gallium-filled microcapillaries on ion-bombarded GaN

Botman, A Bahm, A Randolph, S Straw, M Toth, M

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Publication Type:: Journal Article
Citation:: Physical Review Letters, 2013, 111 (13)
Issue Date:: 2013-09-25

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Field	Value	Language
dc.contributor.author	Botman, A	en_US
dc.contributor.author	Bahm, A	en_US
dc.contributor.author	Randolph, S	en_US
dc.contributor.author	Straw, M	en_US
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899	en_US
dc.date.issued	2013-09-25	en_US
dc.identifier.citation	Physical Review Letters, 2013, 111 (13)	en_US
dc.identifier.issn	0031-9007	en_US
dc.identifier.uri	http://hdl.handle.net/10453/115808
dc.description.abstract	Bottom-up growth of microscopic pillars is observed at room temperature on GaN irradiated with a Ga+ beam in a gaseous XeF2 environment. Ion bombardment produces Ga droplets which evolve into pillars, each comprised of a spherical Ga cap atop a Ga-filled, gallium fluoride tapered tube (sheath). The structures form through an interdependent, self-ordering cycle of liquid cap growth and solid sheath formation. The sheath and core growth mechanisms are not catalytic, but instead consistent with a model of ion-induced Ga and F generation, Ga transport through surface diffusion, and heterogeneous sputtering caused by self-masking of the tapered pillars. © 2013 American Physical Society.	en_US
dc.relation.ispartof	Physical Review Letters	en_US
dc.relation.isbasedon	10.1103/PhysRevLett.111.135503	en_US
dc.subject.classification	General Physics	en_US
dc.title	Spontaneous growth of gallium-filled microcapillaries on ion-bombarded GaN	en_US
dc.type	Journal Article
utslib.citation.volume	13	en_US
utslib.citation.volume	111	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	01 Mathematical Sciences	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
pubs.organisational-group	/University of Technology Sydney/Students
utslib.copyright.status	open_access
pubs.issue	13	en_US
pubs.publication-status	Published	en_US
pubs.volume	111	en_US

Abstract:

Bottom-up growth of microscopic pillars is observed at room temperature on GaN irradiated with a Ga+ beam in a gaseous XeF2 environment. Ion bombardment produces Ga droplets which evolve into pillars, each comprised of a spherical Ga cap atop a Ga-filled, gallium fluoride tapered tube (sheath). The structures form through an interdependent, self-ordering cycle of liquid cap growth and solid sheath formation. The sheath and core growth mechanisms are not catalytic, but instead consistent with a model of ion-induced Ga and F generation, Ga transport through surface diffusion, and heterogeneous sputtering caused by self-masking of the tapered pillars. © 2013 American Physical Society.

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http://hdl.handle.net/10453/115808